UNIT FOR SUPPORTING A SUBSTRATE AND APPARATUS FOR PROCESSING A SUBSTRATE HAVING THE SAME

• US 20100193491A1
• Filed: 08/27/2008
• Published: 08/05/2010
• Est. Priority Date: 09/05/2007
• Status: Abandoned Application

• Current Assignee: KoMiCo Ltd.
• Original Assignee: KoMiCo Ltd.
• Inventors: Park, Jung-Hyun, Park, Myung-Ha, Jung, Byoung-Jin, Cho, Sang-Bum
• Application Number:
  US12/676,024
• Publication Number:
  US 20100193491A1
• Time in Patent Office: Days
• US Class Current: 219/158
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

A substrate support unit of a substrate processing apparatus includes a first support member, a second support member, a buffer member and a tube. The first support member has an electrode and a heater built-in and supports the substrate. The second support member is disposed beneath the first support member to support the first support member. The buffer member is disposed between the first support member and the second support member to form an air gap between the first support member and the second support member so as to reduce heat transfer between the first support member and the second support member. The tube is connected with a lower surface of the first support member. Further, the tube extends through the second support member and receives lines for applying power to the electrode and the heater.

Claims

1. A unit for supporting a substrate comprising:

a first support member having an electrode and a heater and supporting the substrate;

a second support member disposed beneath the first support member to support the first support member; and

a buffer member disposed between the first support member and the second support member to form an air gap between the first support member and the second support member so as to reduce heat transfer between the first support member and the second support member.

2. The unit of claim 1, further comprising a tube connected to a lower surface of the first support member, the tube extending through the second support member and receiving lines for applying power to the electrode and the heater.

3. The unit of claim 2, further comprising a sealing member interposed between the second support member and the tube.

4. The unit of claim 3, further comprising a cooling line disposed adjacent to the sealing member within the second support member to cool the sealing member.

5. The unit of claim 2, wherein the tube comprises a material substantially identical to that of the first support member.

6. The unit of claim 1, further comprising a cooling line disposed within the second support member to cool the second support member.

7. The unit of claim 1, wherein the first support unit comprises a ceramic material.

8. The unit of claim 1, wherein the air gap between the first support member and the second support member is about 0.1 to about 5 mm.

9. The unit of claim 1, wherein a ratio of a contact area between the buffer member and the first support member to an area of a lower surface of the first support member is about 0.05 to about 0.9.

10. The unit of claim 1, wherein the buffer member has a heat transfer coefficient of about 1 to about 30 W/(m·

K).

11. The unit of claim 1, wherein the buffer member is any one selected from the group consisting of Al₂O₃, Y₂O₃, ZnO and SiO₂.

12. An apparatus for processing a substrate comprising:

a chamber providing a space to process the substrate;

a substrate support unit disposed in the chamber and comprising a first support member having an electrode and a heater and supporting the substrate, a second support member disposed beneath the first support member to support the first support member, and a buffer member disposed between the first support member and the second support member to form an air gap between the first support member and the second support member so as to reduce heat transfer between the first support member and the second support member; and

a gas supply section supplying a process gas onto the substrate to process the substrate.