THIN-FILM TRANSISTOR AND DISPLAY DEVICE
First Claim
1. A thin-film transistor, comprising:
- a gate electrode formed on a substrate;
an oxide semiconductor layer forming a channel region corresponding to the gate electrode;
a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film;
a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film;
a source/drain electrode; and
a protecting film,wherein an upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.
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Accused Products
Abstract
A thin-film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film. An upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.
45 Citations
9 Claims
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1. A thin-film transistor, comprising:
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a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film, wherein an upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device, comprising
a display element, and a thin-film transistor driving the display element, the thin-film transistor including: -
a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and having a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and having one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film, wherein an upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film. - View Dependent Claims (9)
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Specification
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- Resources
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Current AssigneeJDI Design and Development GK
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Original AssigneeSony Corporation (Sony Group Corp.)
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InventorsMorosawa, Narihiro, Fujimori, Takashige
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/43
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CPC Class CodesH01L 21/02554 OxidesH01L 21/02565 Oxide semiconducting materi...H01L 21/02631 Physical deposition at redu...H01L 27/1225 with semiconductor material...H01L 29/7869 having a semiconductor body...H10K 2102/3026 Top emissionH10K 59/12 Active-matrix OLED [AMOLED]...
