SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a first semiconductor layer;
a first insulating layer over the first semiconductor layer;
a first conductive layer and a second conductive layer which are over the first insulating layer;
a second insulating layer over the first conductive layer and the second conductive layer; and
a second semiconductor layer over the second insulating layer,wherein the first semiconductor layer comprises crystalline silicon, andwherein the second semiconductor layer comprises an oxide semiconductor.
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Abstract
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate transistor which includes a semiconductor layer of amorphous silicon (microcrystalline silicon) are formed over the same substrate. Then, gate electrodes of each transistor are formed with the same layer, and source and drain electrodes are also formed with the same layer. Thus, manufacturing steps are reduced. In other words, two types of transistors can be manufactured by adding only a few steps to the manufacturing process of a bottom gate transistor.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a first semiconductor layer; a first insulating layer over the first semiconductor layer; a first conductive layer and a second conductive layer which are over the first insulating layer; a second insulating layer over the first conductive layer and the second conductive layer; and a second semiconductor layer over the second insulating layer, wherein the first semiconductor layer comprises crystalline silicon, and wherein the second semiconductor layer comprises an oxide semiconductor. - View Dependent Claims (4, 7, 9)
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2. A semiconductor device comprising:
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a first semiconductor layer; a first insulating layer over the first semiconductor layer; a first conductive layer and a second conductive layer which are over the first insulating layer; a second insulating layer over the first conductive layer and the second conductive layer; a second semiconductor layer over the second insulating layer; a third semiconductor layer over the second insulating layer; a third conductive layer over the second semiconductor layer; and a fourth conductive layer over the third semiconductor layer, wherein the first semiconductor layer comprises crystalline silicon, and wherein the second semiconductor layer comprises an oxide semiconductor. - View Dependent Claims (5, 8, 10)
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3. A semiconductor device comprising:
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a top gate transistor comprising a crystalline silicon; and a bottom gate transistor comprising an oxide semiconductor. - View Dependent Claims (6, 11)
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12. A method for manufacturing a semiconductor device comprising:
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forming a first insulating layer over a first semiconductor layer; forming a conductive layer over the first insulating layer; forming a first conductive layer and a second conductive layer by etching the conductive layer; forming a second insulating layer over the first conductive layer and the second conductive layer; and forming a second semiconductor layer over the second insulating layer, wherein the first semiconductor layer comprises crystalline silicon, and wherein the second semiconductor layer comprises an oxide semiconductor. - View Dependent Claims (14)
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13. A method for manufacturing a semiconductor device comprising:
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forming a first insulating layer over a first semiconductor layer; forming a first conductive layer over the first insulating layer; forming a second conductive layer and a third conductive layer by etching the first conductive layer; forming a second insulating layer over the second conductive layer and the third conductive layer; forming a second semiconductor layer over the second insulating layer; forming a third semiconductor layer and a fourth semiconductor layer by etching the second semiconductor layer; forming a fourth conductive layer over the third semiconductor layer and the fourth semiconductor layer; and forming a fifth conductive layer over the third semiconductor layer and a sixth conductive layer over the fourth semiconductor layer by etching the fourth conductive layer, wherein the first semiconductor layer comprises a crystalline silicon, and wherein the second semiconductor layer comprises an oxide semiconductor. - View Dependent Claims (15)
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Specification