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SEMICONDUCTOR DEVICE

  • US 20100193785A1
  • Filed: 04/06/2010
  • Published: 08/05/2010
  • Est. Priority Date: 06/29/2007
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a first semiconductor layer;

    a first insulating layer over the first semiconductor layer;

    a first conductive layer and a second conductive layer which are over the first insulating layer;

    a second insulating layer over the first conductive layer and the second conductive layer; and

    a second semiconductor layer over the second insulating layer,wherein the first semiconductor layer comprises crystalline silicon, andwherein the second semiconductor layer comprises an oxide semiconductor.

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