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In-Situ Formed Capping Layer in MTJ Devices

  • US 20100193891A1
  • Filed: 04/08/2010
  • Published: 08/05/2010
  • Est. Priority Date: 02/18/2008
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a magnetic tunnel junction (MTJ) cell comprising;

    a pinning layer;

    a tunnel barrier layer; and

    a free layer; and

    a dielectric capping layer on sidewalls of the MTJ cell comprising sidewalls of the pinning layer, the tunnel barrier layer, and the free layer, wherein the dielectric capping layer has a non-neutral stress.

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