Package-on-Package Using Through-Hole Via Die on Saw Streets
First Claim
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1. A semiconductor device, comprising:
- a first semiconductor die having a plurality of first contact pads formed on a surface of the first semiconductor die;
a first organic material deposited around a peripheral region of the first semiconductor die;
a plurality of first conductive through-hole vias (THV) formed through the first organic material in the peripheral region around the first semiconductor die;
a plurality of conductive traces formed over the surface of the first semiconductor die respectively between the first conductive THVs and first contact pads;
a plurality of first bumps formed over the first conductive THVs or the surface of the first semiconductor die;
a first encapsulant deposited over the first bumps, first semiconductor die, and first organic material, the first bumps being exposed from the first encapsulant; and
a second semiconductor die mounted over the first encapsulant and electrically connected to the first bumps.
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Abstract
A semiconductor package-on-package (PoP) device includes a first die incorporating a through-hole via (THV) disposed along a peripheral surface of the first die. The first die is disposed over a substrate or leadframe structure. A first semiconductor package is electrically connected to the THV of the first die, or electrically connected to the substrate or leadframe structure. An encapsulant is formed over a portion of the first die and the first semiconductor package.
65 Citations
25 Claims
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1. A semiconductor device, comprising:
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a first semiconductor die having a plurality of first contact pads formed on a surface of the first semiconductor die; a first organic material deposited around a peripheral region of the first semiconductor die; a plurality of first conductive through-hole vias (THV) formed through the first organic material in the peripheral region around the first semiconductor die; a plurality of conductive traces formed over the surface of the first semiconductor die respectively between the first conductive THVs and first contact pads; a plurality of first bumps formed over the first conductive THVs or the surface of the first semiconductor die; a first encapsulant deposited over the first bumps, first semiconductor die, and first organic material, the first bumps being exposed from the first encapsulant; and a second semiconductor die mounted over the first encapsulant and electrically connected to the first bumps. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device, comprising:
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a first semiconductor die; a first organic material deposited around a peripheral region of the first semiconductor die; first conductive vias formed through the first organic material in the peripheral region around the first semiconductor die; a first interconnect structure formed over the first conductive vias or a surface of the first semiconductor die; a first encapsulant deposited over the first interconnect structure, first semiconductor die, and first organic material, the first interconnect structure being exposed from the first encapsulant; and a second semiconductor die mounted over the first encapsulant and electrically connected to the first interconnect structure. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A semiconductor device, comprising:
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a first semiconductor die; a first organic material deposited around a peripheral region of the first semiconductor die; first conductive vias formed through the first organic material in the peripheral region around the first semiconductor die; a first interconnect structure formed over the first conductive vias or a surface of the first semiconductor die; and a second semiconductor die mounted over the first semiconductor die and electrically connected to the first interconnect structure. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A semiconductor device, comprising a plurality of stacked semiconductor die each including:
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an organic material deposited around a peripheral region of the semiconductor die; a plurality of conductive vias formed through the organic material in a peripheral region around the semiconductor die; and an interconnect structure formed over the conductive vias or a surface of the semiconductor die. - View Dependent Claims (22, 23, 24, 25)
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Specification