INTEGRATED ANTENNAS IN WAFER LEVEL PACKAGE

• US 20100193935A1
• Filed: 12/23/2009
• Published: 08/05/2010
• Est. Priority Date: 01/30/2009
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Wojnowski, Maciej, Lachner, Rudolf, Maurer, Linus
• Granted Patent: US 8,278,749 B2
• Time in Patent Office: Days
• US Class Current: 257/693
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2223/6655 Matching arrangements, e.g. arrangement of inductive and capacitive components
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2223/6683 for monolithic microwave integrated circuit [MMIC]
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/12 Structure, shape, material or disposition of the bump connectors prior to the connecting process
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1423 : Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/18162 : of a chip with build-up interconnect
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01Q 1/2283 : mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 9/0407 : Substantially flat resonant element parallel to ground plane, e.g. patch antenna dipole H01Q9/285; monopole H01Q9/40
• CPC Class Codes: H01Q 9/045 : with particular feeding means for circular polarisation H01Q9/0428
• CPC Class Codes: H01Q 9/0457 : electromagnetically coupled to the feed line

Abstract

A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.

Claims

1. A semiconductor module generating and/or receiving electromagnetic radiation for wireless communication and/or radar and/or wireless sensing and/or imaging applications, comprising:

a package molding compound layer comprising an integrated circuit (IC) device embedded within a package molding compound; and

an interface layer comprising;

a redistribution layer coupled to the IC device and the package molding compound layer for connecting the IC device externally;

at least one integrated antenna structure integrated from within the interface layer and coupled to the IC device.

2. The module of claim 1, the interface layer further comprising:

a bonding interconnect structure having three dimensional interconnect structures configured to connect the IC device externally from the package molding compound layer; and

a dielectric coat;

wherein the integrated antenna structure is integrated within the interface layer to the IC device and contacts bond pad connections of the IC device through a feed structure.

3. The module of claim 1, further comprising:

a bonding interconnect structure comprising surface-mountable solder balls providing external contacts and a mechanical support structure with at least one bond wire; and

a reflector plate.

4. The module of claim 3, further comprising:

a circuit board substrate; and

an air cavity located between the circuit board substrate and the interface layer;

wherein the reflector plate is located on a top surface of the circuit board substrate and within the air cavity.

5. The module of claim 4, wherein the reflector plate is located opposite one side of the air cavity from the integrated antenna structure.

6. The module of claim 4, wherein the air cavity comprises a filler comprising an epoxy material filling the air cavity, and wherein the interface layer further comprises a metallization layer for integrating the bonding interconnect structure and the integrated antenna structure to the IC device.

7. The module of claim 1, further comprising a metal layer located on a surface of the package molding compound layer for modulating a field directivity of the integrated antenna structure.

8. A semiconductor module for wireless communication and/or radar and/or wireless sensing and/or imaging applications, comprising:

a package molding compound layer;

an integrated circuit (IC) device embedded within the package molding compound layer;

an interface layer comprising;

a redistribution layer coupled to the IC device and the package molding compound layer; and

at least one integrated antenna structure integrated from within the interface layer and coupled to the IC device; and

a second package molding compound layer.

9. The module of claim 8, wherein the integrated antenna structure is coupled to the IC device through a feed structure directly connected to the IC device and without a bonding interface structure that is external to bond pad connections of the IC device.

10. The module of claim 8, further comprising a reflector plate, wherein the interface layer further comprises a bonding interface structure comprising surface-mountable solder balls providing external contacts and a mechanical support structure with at least one bond wire.

11. The module of claim 10, wherein the reflector plate is located opposite one side of the package molding compound layer from the interface layer coupled thereto and parallel to the integrated antenna structure embedded within the interface layer.

12. The module of claim 10, wherein the second package molding compound layer surrounds surfaces comprising the interface layer, the mold package compound layer with the IC device, the bonding interface structure, and/or the reflector plate.

13. The module of claim 8, wherein the second package molding compound layer comprises an opening surrounding the interface layer where the second package molding compound layer is absent.

14. The module of claim 8, further comprising a metal layer located on a surface of the second package molding compound layer for modulating a field directivity of the integrated antenna structure.

15. A method for fabricating a semiconductor module, the method comprising:

providing an integrated circuit (IC) chip within a package molding compound layer having a surface;

forming an interface layer on the surface of the integrated circuit (IC) chip and the package molding compound layer comprising;

depositing a redistribution layer;

forming at least one integrated antenna structure coupled to the to the IC chip through the redistribution layer, and at least one three dimensional interconnect structure also coupled to the IC chip through the redistribution layer; and

depositing a dielectric coat.

16. The method of claim 15, further comprising:

depositing a second package molding compound layer that surrounds the interface layer with the integrated antenna structure, the mold package compound layer with the IC chip, the bonding interface structure, and a reflector plate.

17. The method of claim 15, further comprising:

forming a metal layer located on a surface over the integrated antenna structure for modulating a field directivity of the integrated antenna structure.

18. The method of claim 15, wherein the three dimensional interconnect structure comprises surface-mountable solder balls providing external contacts and a mechanical support structure;

and

a reflector plate.

19. The method of claim 15, further comprising:

forming a reflector plate;

forming a circuit board substrate and an air cavity filled with air located between the circuit board substrate and the interface layer;

wherein the reflector plate is located on a top surface of the circuit board substrate and within the air cavity.

20. The method of claim 19, wherein the air cavity is filled with a filler compound that has a dielectric constant greater than one.