PHOTOELECTROCHEMICAL ETCHING FOR LASER FACETS
First Claim
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1. A method for fabricating a semiconductor laser device, comprising:
- etching one or more facets of the semiconductor laser device using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support oscillation of optical modes within a cavity of the semiconductor laser device bounded by the facets.
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Abstract
A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.
15 Citations
16 Claims
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1. A method for fabricating a semiconductor laser device, comprising:
etching one or more facets of the semiconductor laser device using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support oscillation of optical modes within a cavity of the semiconductor laser device bounded by the facets. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor laser device, comprising:
a cavity bounded by facets that are not crystallographic and are not along a cleavage plane of the semiconductor laser device. - View Dependent Claims (13, 14, 15)
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16. A method of fabricating a semiconductor device, comprising:
wet etching the semiconductor device so that chemical etching only proceeds in areas illuminated by light.
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