MASK AND METHOD TO PATTERN CHROMELESS PHASE LITHOGRAPHY CONTACT HOLE

• US 20100196805A1
• Filed: 01/28/2010
• Published: 08/05/2010
• Est. Priority Date: 01/03/2005
• Status: Active Grant

• Current Assignee: Globalfoundries Singapore Pte Limited (GlobalFoundries, Inc.)
• Original Assignee: Chartered Semiconductor Manufacturing Incorporated (GlobalFoundries, Inc.)
• Inventors: TAN, Soon Yoeng, CHONG, Huey Ming, LIN, Qun Ying, TAN, Sia Kim, HSIA, Liang Choo
• Granted Patent: US 8,057,968 B2
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/34 Phase-edge PSM, e.g. chromeless PSM; Preparation thereof

Abstract

A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region.

Claims

1. A method of making a mask comprising:

providing a first and a second mask layers;

disposing a first phase shift region on the first mask layer;

disposing a second phase shift region on the second mask layer, wherein the first and second phase shift regions are out of phase; and

forming a continuous unit cell in the first phase shift region, wherein the unit cell comprises a center section and distinct extension sections, the extension sections are contiguous to and extend outwards from the center section, the distinct extension sections having a same width as the center section, the second phase shift region is adjacent to the unit cell in the first phase shift region.

2. The method of claim 1 wherein:

the first phase shift region has a 180 degree shift and the second phase shift region has a zero degree shift;

or

the first phase shift region has a zero degree shift and the second phase shift region has a 180 degree shift.

3. The method of claim 1 wherein the unit cell has an orthogonal cross shape with the extension sections extending outwards from the center section.

4. The method of claim 1 wherein the unit cell has a T shape with three extension sections extending outwards from the center section.

5. The method of claim 1 wherein the unit cell has an orthogonal cross shape with the center section having a square shape and four distinct square shape rectangular sections extending outwards from the square center section, the center section and the rectangular sections have the same length sides.

6. The method of claim 1 wherein the extension sections have a minimum length between 70 and 200% of the width of the center section.

7. The method of claim 1 wherein the first phase shift region comprises a plurality of unit cells arranged in a row or column formation whereby contact holes are formed in a row or column formation under the center section.

8. The method of claim 1 wherein the unit cell comprises four distinct extension sections extending from sides of the center section.

9. A method of making a mask comprising:

providing first and second phase shift regions which are out of phase; and

disposing a continuous unit cell in the first phase shift region, wherein the unit cell comprises a center section and distinct extension sections which are contiguous to and extend from the center section, the distinct extension sections having a same width as the center section.

10. The method of claim 9 wherein the central and distinct extension sections comprise rectangular shaped portions.

11. The method of claim 9 wherein the unit cell comprises at least three distinct extension sections extending from at least three sides of the center section.

12. The method of claim 9 wherein the unit cell comprises four distinct extension sections extending from sides of the center section.

13. The method of claim 10 wherein the unit cell comprises at least three distinct extension sections extending from at least three sides of the center section.

14. The method of claim 10 wherein the unit cell comprises four distinct extension sections extending from sides of the center section.

15. The method of claim 9 wherein the unit cell comprises three distinct extension sections extending from at least three sides of the center section to form a T-shaped unit cell.

16. The method of claim 9 wherein the unit cell comprises four distinct extension sections extending from the center section to form a cross-shaped unit cell.

17. The method of claim 9 wherein the unit cell has an orthogonal cross shape with the center section having a square shape and four distinct square shape rectangular sections extending outwards from the square center section, the center section and the rectangular sections have the same length sides.

18. The method of claim 9 wherein the extension sections have a minimum length between 70 and 200% of the width of the center section.

19. The method of claim 9 wherein the first phase shift region comprises a plurality of unit cells arranged in a row or column formation whereby contact holes are formed in a row or column formation under the center section.

20. A mask comprising:

first and second phase shift regions which are out of phase; and

a continuous unit cell disposed in the first phase shift region, wherein the unit cell comprises a center section and distinct extension sections which are contiguous to and extend from the center section, the distinct extension sections having a same width as the center section.