TECHNIQUE FOR PROCESSING A SUBSTRATE

• US 20100197125A1
• Filed: 01/28/2010
• Published: 08/05/2010
• Est. Priority Date: 01/30/2009
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Low, Russell J., Gupta, Atul, Bateman, Nicholas P.T., Weaver, William
• Granted Patent: US 8,685,846 B2
• Time in Patent Office: Days
• US Class Current: 438/514
• CPC Class Codes: H01J 2237/0458 movable, i.e. for changing between differently sized apertures
• CPC Class Codes: H01J 2237/31711 using mask
• CPC Class Codes: H01J 37/09 Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.

Claims

1. A method for processing a substrate, the method comprising:

ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and

disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.

2. The method according to claim 1, wherein the first and second mask holders have at least one degree of rotational freedom.

3. The method according to claim 1, further comprising:

spinning the first and second mask holders in a first direction to unwind the second portion of the mask and disposing the second portion of the mask in front of the substrate.

4. The method according to claim 3, further comprising:

spinning the first and second mask holders in a second direction opposite to the first direction.

5. The method according to claim 4, wherein the spinning the first and second mask holders in the second direction occurs after the spinning the first and second mask holders in the first direction.

6. The method according to claim 3, wherein the spinning the first and second mask holders in the first direction occurs during the ion implanting.

7. The method according to claim 5, wherein the spinning the first and second mask holders in the first direction and the spinning the first and second mask holders in the second direction occur during the ion implanting.

8. The method according to claim 3, wherein the spinning the first and second mask holders in the first direction occurs after the ion implanting.

9. The method according to claim 1, wherein the mask comprises metallic species.

10. The method according to claim 9, wherein the metallic species contains at least one of aluminum (Al), silver (Ag), gold (Au), platinum (Pt), copper (Cu), iron (Fe), nickel (Ni), zinc (Zn), tungsten (W), and lead (Pb).

11. The method according to claim 1, wherein the mask comprises non-metallic species.

12. The method according to claim 11, wherein the non-metallic species contains at least one of silicon (Si), polymer, graphite fiber, carbon fiber, and silicon dioxide.

13. The method according to claim 1, wherein the mask further comprises a coating containing at least one of silicon dioxide (SiO₂), boron nitride (BN), silicon carbide (SiC), silicon nitride (SiN), carbon film, and silicon film.

14. The method according to claim 1, wherein the mask is a tape mask having a plurality of apertures.

15. An ion implantation system for processing a substrate, the ion implantation system comprising:

an ion source for generating ions of desired species;

a substrate disposed downstream of the ion source; and

a mask unit disposed downstream of the ion source, the mask unit comprising;

first and second mask holders spaced apart from one another, the first and second mask holders having at least one degree of rotational freedom;

at least one mask having first and second portions and being supported by the first and second mask holders, the first portion of the mask being disposed upstream of the substrate, the second portion of the mask being wound in the first mask holder.

16. The ion implantation system according to claim 15, wherein each of the first and second mask holders is a bobbin.

17. The ion implantation system according to claim 15, wherein rotation of at least one of the first and second mask holders unwinds the second portion of the mask and disposes the second portion upstream of the substrate.

18. The ion implantation system according to claim 15, wherein the mask comprises metallic species.

19. The ion implantation system according to claim 15, wherein the mask comprises non-metallic species.

20. The ion implantation system according to claim 15, wherein the mask further comprises a coating containing at least one of silicon dioxide (SiO₂), boron nitride (BN), silicon carbide (SiC), silicon nitride (SiN), carbon film and silicon film.

21. The ion implantation system according to claim 15, wherein at least one of the first and second mask holders comprises a groove for aligning the mask relative to the substrate.

22. The ion implantation system according to claim 15, wherein at least one of the first and second mask holders comprises a peg for aligning the mask relative to the substrate

23. A mask unit for processing a substrate, the mask unit comprising:

first and second mask holders spaced apart from one another, the first and second mask holders having at least one degree of rotational freedom; and

at least one mask having first and second portions and being supported by the first and second mask holders, the first portion of the mask being disposed between the first and second mask holders and the second portion of the mask being wound in the first mask holder.

24. The mask unit according to claim 23, wherein each of the first and second mask holders is a bobbin.

25. The mask unit according to claim 23, wherein rotation of the first and second mask holders unwinds the second portion of the at least one mask and disposes the second portion between the first and second mask holders.

26. The mask unit according to claim 23, wherein the at least one mask comprises metallic species.

27. The mask unit according to claim 26, wherein the metallic species contains at least one of aluminum (Al), silver (Ag), gold (Au), platinum (Pt), copper (Cu), iron (Fe), nickel (Ni), zinc (Zn), tungsten (W), and lead (Pb).

28. The mask unit according to claim 23, wherein the at least one mask comprises non-metallic species.

29. The mask unit according to claim 28, wherein the non-metallic species contains at least one of carbon and silicon.

30. The mask unit according to claim 28, wherein the non-metallic species contains at least one of polymer, graphite fiber, carbon fiber, and silicon dioxide.

31. The mask unit according to claim 23, wherein the at least one mask further comprises a coating containing at least one of silicon dioxide (SiO₂), boron nitride (BN), silicon carbide (SiC), silicon nitride (SiN), carbon film, and silicon film.

32. The mask unit according to claim 23, wherein the at least one mask is a tape mask having a plurality of apertures.