3 TRANSISTORS 4 SHARED STEP & REPEAT UNIT CELL AND 3 TRANSISTORS 4 SHARED IMAGE SENSOR INCLUDING THE UNIT CELLS

• US 20100200729A1
• Filed: 12/18/2007
• Published: 08/12/2010
• Est. Priority Date: 12/19/2006
• Status: Active Grant

• Current Assignee: SK Hynix Inc.
• Original Assignee: Siliconfile Technologies Incorporated (SK Hynix Inc.)
• Inventors: Lee, Do-Young
• Granted Patent: US 8,222,586 B2
• Time in Patent Office: Days
• US Class Current: 250/208.100
• CPC Class Codes: H01L 27/14641 Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
• CPC Class Codes: H04N 25/778 comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Abstract

A 3T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including three transistors and a 3T-4S image sensor including the 3T-4S step & repeat unit cell are provided. The 3T-4S step & repeat unit cell includes first to fourth photodiodes. A first shared image sensor unit cell is obtained by combining the first and second photodiodes with four transistors. A second shared image sensor unit cell is obtained by combining the third and fourth photodiodes with four transistors. Signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line. Signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line. A terminal of each of the four photodiodes is connected to a first voltage source. Conversion voltages corresponding to image signals incident onto two photodiodes via green filters are output through a common detection line. Conversion voltages corresponding to image signals incident onto the other two photodiodes via red and blue filters are output through another common detection line.

Claims

1. A 3T-4S step &

repeat unit cell comprising;

a first photodiode (0, 0);

a second photodiode (1, 1) disposed in a diagonal direction of the first photodiode;

a third photodiode (1, 2) disposed at a side of the second photodiode; and

a fourth photodiode (2, 1) disposed over the second photodiode,

wherein a first shared image sensor unit cell is constructed by combining the first and second photodiodes with four transistors, and a second shared image sensor unit cell is constructed by combining the third and fourth photodiodes with four transistors, and

wherein signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line OUT1, signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line OUT2, and a terminal of each of the four photodiodes is connected to a first voltage source.

2. The 3T-4S step &

repeat unit cell of claim 1, wherein the first shared image sensor unit cell includes;

a first transmission transistor M1 including a terminal connected to the other terminal of the first photodiode (0, 0) and a gate applied with a first transmission signal Tx0;

a second transmission transistor M2 including a terminal connected to the other terminal of the second photodiode (1, 1) and a gate applied with a second transmission signal Tx1;

a first reset transistor M3 including a terminal connected to a common node FDnode01 of the other terminal of the first transmission transistor M1 and the other terminal of the second transmission transistor M2, the other terminal connected to a selection signal Sx, and a gate applied with a 01-reset signal Rx01; and

a first conversion transistor M4 including a terminal connected to the selection signal Sx or the second voltage source Vdd, the other terminal connected to the first common detection line OUT1, and a gate the common node FDnode01 of the other terminal of the first transmission transistor and the other terminal of the second transmission transistor.

3. The 3T-4S step &

repeat unit cell of claim 2, wherein the second shared image sensor unit cell includes;

a third transmission transistor M5 including a terminal connected to the other terminal of the third photodiode (1, 2) and a gate applied with a second transmission signal Tx1;

a fourth transmission transistor M6 including a terminal connected to the other terminal of the fourth photodiode (2, 1) and a gate applied with a third transmission signal Tx2;

a second reset transistor M7 including a terminal connected to a common node FDnode12 of the other terminal of the third transmission transistor M5 and the other terminal of the fourth transmission transistor M6 and the other terminal connected to a selection signal Sx; and

a second conversion transistor M8 including a terminal connected to the selection signal Sx or the second voltage source Vdd, the other terminal connected to the second common detection line OUT2, and a gate connected to the common node FDnode12 of the other terminal of the third transmission transistor M5 and the other terminal of the fourth transmission transistor M6.

4. The 3T-4S step &

repeat unit cell of claim 1,

wherein when the first and second photodiodes (0, 0) and (1, 1) operate in response to image signals incident via a first filter, the third and fourth photodiodes (1, 2) and (2, 1) operate in response to image signals incident respectively via second and third filters, and

wherein when the third and fourth photodiodes (1, 2) and (2, 1) operate in response to the image signals incident via the first filter, the first and second photodiodes (0, 0) and (1, 1) operate in response to image signals incident respectively via the second and third filters.

5. The 3T-4S step &

repeat unit cell of claim 4, wherein the first filter is a green filter, and each of the second and third filters is a red or blue filter.

6. The 3T-4S step &

repeat unit cell of claim 3,

wherein the 01-reset signal Rx01 is enabled respectively in relation to the first and second transmission signals Tx0 and Tx1,

wherein the 12-reset signal Rx 12 is enabled respectively in relation to the second and third transmission signals Tx1 and Tx2, and

wherein the selection signal Sx01 is enabled respectively in relation to the first to third transmission signals Tx0 to Tx3.

7. A 3T-4S image sensor in which a plurality of the 3T-4S step &

repeat unit cells of claim 1 are two-dimensionally arranged,

wherein a plurality of common detection lines are vertically or horizontally arranged between neighboring 3T-4S step &

repeat unit cells among the two-dimensionally arranged plurality of 3T-4S step &

repeat unit cells, and

wherein the plurality of 3T-4S step &

repeat unit cells arranged along the plurality of common detection lines output conversion voltages corresponding to image signals incident onto photodiodes through two neighboring common detection lines.

8. The 3T-4S image sensor of claim 7, wherein each of the 3T-4S step &

repeat unit cells outputs conversion voltages corresponding to image signals incident onto two photodiodes via green filters through a single common detection line and outputs conversion voltages corresponding to images signals incident onto another two photodiodes via red and blue filters through another single common detection line.

9. The 3T-4S image sensor of claim 8, wherein one of the two neighboring common detection lines passes through the two-dimensionally arranged plurality of 3T-4S step &

repeat unit cells, and the other of the two neighboring common detection lines is disposed near the unit cells.

10. The 3T-4S image sensor of claim 9, wherein common detection lines through which conversion voltages generated in correspondence with image signals incident via green filters are output and common detection lines through which conversion voltages generated in correspondence with image signals incident via red and blue filters are output are alternately arranged.

11. A 3T-4S step &

repeat unit cell comprising;

a first photodiode (0, 0);

a second photodiode (1, 0) disposed over the first photodiode;

a third photodiode (1, 1) disposed at a side of the second photodiode; and

a fourth photodiode (2, 1) disposed over the third photodiode,

wherein a first shared image sensor unit cell is constructed by combining the first and third photodiodes (0, 0) and (1, 1) with four transistors, and a second shared image sensor unit cell is constructed by combining the second and fourth photodiodes (1, 0) and (2, 1) with four transistors, and

wherein signals corresponding to images incident onto the second and fourth photodiodes (1, 0) and (2, 1) are output through a first common detection line OUT1, signals corresponding to images incident onto the first and third photodiodes (0, 0) and (1, 1) are output through a second common detection line OUT2, and a terminal of each of the four photodiodes is connected to a first voltage source.

12. The 3T-4S step &

repeat unit cell of claim 11, wherein the first shared image sensor unit cell includes;

a first transmission transistor M1 including a terminal connected to the other terminal of the first photodiode and a gate applied with a first transmission signal Tx0;

a second transmission transistor M2 including a terminal connected to the other terminal of the third photodiode and a gate applied with a second transmission signal Tx1;

a first reset transistor M3 including a terminal connected to a common node FDnode01 of the other terminal of the first transmission transistor and the other terminal of the second transmission transistor, the other terminal connected to a selection signal Sx, and a gate applied with a 01-reset signal Rx01; and

a first conversion transistor M4 including a terminal connected to the selection signal Sx or the second voltage source Vdd and a gate connected to the common node FDnode01 of the other terminal of the first transmission transistor and the other terminal of the second transmission transistor.

13. The 3T-4S step &

repeat unit cell of claim 12, wherein the second shared image sensor unit cell includes;

a third transmission transistor M5 including a terminal connected to the other terminal of the second photodiode and a gate applied with a second transmission signal Tx1;

a fourth transmission transistor M6 including a terminal connected to the other terminal of the fourth photodiode and a gate applied with a third transmission signal Tx2;

a second reset transistor M7 including a terminal connected to a common node FDnode12 of the other terminal of the third transmission transistor M5 and the other terminal of the fourth transmission transistor M6 and the other terminal connected to a selection signal Sx; and

a second conversion transistor M8 including a terminal connected to the selection signal Sx or the second voltage source Vdd and a gate connected to the common node FDnode12 of the other terminal of the third transmission transistor M5 and the other terminal of the fourth transmission transistor M6.

14. The 3T-4S step &

repeat unit cell of claim 11,

wherein when the first and third photodiodes (0, 0) and (1, 1) operate in response to image signals incident via a first filter, the second and fourth photodiodes (1, 0) and (2, 1) operate in response to image signals incident respectively via second and third filters, and

wherein when the second and fourth photodiodes (1, 0) and (2, 1) operate in response to the image signals incident via the first filter, the first and third photodiodes (0, 0) and (1, 1) operate in response to image signals incident respectively via the second and third filters.

15. The 3T-4S step &

repeat unit cell of claim 13,

wherein the 01-reset signal Rx01 is enabled respectively in relation to the first and second transmission signals Tx0 and Tx1,

wherein the 12-reset signal Rx12 is enabled respectively in relation to the second and third transmission signals Tx1 and Tx2, and

wherein the 01-selection signal Sx01 is enabled respectively in relation to the first to third transmission signals Tx0 to Tx2.

16. A 3T-4S image sensor in which a plurality of the 3T-4S step &

repeat unit cells of claim 12 are two-dimensionally arranged,

wherein a plurality of common detection lines are vertically or horizontally arranged between neighboring 3T-4S step &

repeat unit cells among the two-dimensionally arranged plurality of 3T-4S step &

repeat unit cells, and

wherein the plurality of 3T-4S step &

repeat unit cells arranged along the plurality of common detection lines output conversion voltages corresponding to image signals incident onto photodiodes through two neighboring common detection lines.

17. The 3T-4S image sensor of claim 16, wherein each of the 3T-4S step &

repeat unit cells outputs conversion voltages corresponding to image signals incident onto two photodiodes via green filters through a single common detection line and outputs conversion voltages corresponding to images signals incident onto another two photodiodes via red and blue filters through another single common detection line.

18. The 3T-4S image sensor of claim 17, wherein common detection lines through which conversion voltages generated in correspondence with image signals incident via green filters are output and common detection lines through which conversion voltages generated in correspondence with image signals incident via red and blue filters are output are alternately arranged.

19. The 3T-4S image sensor of claim 16,

wherein two common detection lines are arranged on the outermost sides of the two-dimensionally arranged plurality of 3T-4S step &

repeat unit cells, two common detection lines are arranged between neighboring 3T-4S step &

repeat unit cells among the plurality of 3T-4S step &

repeat unit cells, and

wherein in regard to two common detection lines arranged on both sides of each 3T-4S step &

repeat unit cell, conversion voltages corresponding to image signals incident via green filters are output through a common detection line arranged on a side of each 3T-4S step &

repeat unit cell, and conversion voltages corresponding to image signals incident via red and blue filters are output through the other common detection line arranged on the other side of each 3T-4S step &

repeat unit cell.

20. The 3T-4S image sensor of claim 16,

wherein no common detection line is arranged in an outermost side of the two-dimensionally arranged plurality of 3T-4S step &

repeat unit cells, and two common detection lines are arranged in the other outermost side of the two-dimensionally arranged plurality of 3T-4S step &

repeat unit cells and between neighboring 3T-4S step &

repeat unit cells, and

wherein conversion voltages generated in correspondence with image signals incident via green filters are output through one common detection line of the two common detection lines arranged in one side of the 3T-4S step &

repeat unit cells, and conversion voltages generated in correspondence with image signals incident via red and blue filters are output through the other common detection line of the two common detection lines.