SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer;
a first oxide semiconductor layer including In, Sn, and SiOX;
a source region and a drain region which are in contact with the first oxide semiconductor layer; and
a pixel electrode,wherein the source region or the drain region and the pixel electrode are formed from a second oxide semiconductor layer including In, Sn, and O.
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Accused Products
Abstract
An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer; a first oxide semiconductor layer including In, Sn, and SiOX; a source region and a drain region which are in contact with the first oxide semiconductor layer; and a pixel electrode, wherein the source region or the drain region and the pixel electrode are formed from a second oxide semiconductor layer including In, Sn, and O. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a gate electrode layer over a substrate having an insulating surface; a gate insulating layer over the gate electrode layer; a first oxide semiconductor layer including In, Sn, and SiOX over the gate insulating layer; a source region and a drain region which are in contact with the first oxide semiconductor layer; and a pixel electrode, wherein the source region or the drain region and the pixel electrode are formed from a second oxide semiconductor layer including In, Sn, and O. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of manufacturing a semiconductor device, comprising:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming a first oxide semiconductor layer including In, Sn, and SiOX over the gate insulating layer by a sputtering method using a first oxide semiconductor target including In, Sn, Si and O at 5 wt % or higher and 50 wt % or lower; and forming a source region, a drain region, and a pixel electrode over the first oxide semiconductor layer by a sputtering method using a second oxide semiconductor target including In, Sn, Si and O, wherein the source region, the drain region, and the pixel electrode are formed from a second oxide semiconductor layer including In, Sn and O. - View Dependent Claims (20)
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Specification