Method for reclaiming a surface of a substrate
First Claim
1. A method for reclaiming a surface of a substrate, wherein a surface comprises a protruding residual topography resulting from a layer transfer process, wherein the substrate comprises at least a layer of a first material, the method comprising the steps of:
- a) providing a silicon filling material in the non-protruding areas of the surface of the substrate, andb) polishing the surface,wherein the filling material and at least a part of the protruding residual topography are polished simultaneously during polishing step b).
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Abstract
A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the surface of the substrate and the subsequent polishing, the reclaiming can be carried out such that the material consuming double-sided polishing step used in the prior art is no longer necessary.
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Citations
18 Claims
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1. A method for reclaiming a surface of a substrate, wherein a surface comprises a protruding residual topography resulting from a layer transfer process, wherein the substrate comprises at least a layer of a first material, the method comprising the steps of:
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a) providing a silicon filling material in the non-protruding areas of the surface of the substrate, and b) polishing the surface, wherein the filling material and at least a part of the protruding residual topography are polished simultaneously during polishing step b). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 18)
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17. A substrate comprising a base, an ion implanted region as well as a non ion implanted region over the base, in particular in an edge region of the base, a first layer of a first material on the ion implanted region, and a filling layer of a filling material on the non ion implanted region.
Specification