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OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR

  • US 20100200857A1
  • Filed: 11/27/2008
  • Published: 08/12/2010
  • Est. Priority Date: 12/04/2007
  • Status: Active Grant
First Claim
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1. A thin-film transistor comprising a gate electrode, a gate insulating layer, a semiconductor layer comprising an amorphous oxide, source-drain electrodes, and a protective layer, wherein:

  • the semiconductor layer comprisesa first region corresponding to a region in which the source-drain electrodes are formed, anda second region not corresponding to the region in which the source-drain electrodes are formed; and

    at least the first region comprises a crystalline component having a composition different from the composition of the amorphous oxide in the second region.

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