Method for Fabricating a Semiconductor Component Based on GaN

• US 20100200864A1
• Filed: 12/29/2009
• Published: 08/12/2010
• Est. Priority Date: 10/17/2000
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: BADER, Stefan, Hahn, Berthold, Härle, Volker, Eisert, Dominik
• Granted Patent: US 8,129,209 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Claims

1-35. -35. (canceled)

36. A thin-film light emitting-diode comprising:

a carrier comprising germanium;

GaN-based layers comprising an active layer sequence for emitting radiation;

a reflector configured to reflect the radiation emitted by the active layer sequence; and

a contact surface configured to contact-connect the active layer sequence,

wherein the reflector is arranged between the carrier and the GaN-based layers; and

wherein the contact surface is applied to the GaN-based layers on a side of the GaN-based layers which faces away from the carrier.

37. The thin-film light emitting-diode according to claim 36, wherein the carrier consists of germanium.

38. The thin-film light emitting-diode according to claim 36, wherein the reflector comprises aluminium.

39. The thin-film light emitting-diode according to claim 36, wherein the reflector comprises silver.

40. The thin-film light emitting-diode according to claim 36, wherein an outer surface of the GaN-based layers is roughened.

41. The thin-film light emitting-diode according to claim 36, wherein a contact layer is arranged between the reflector and the GaN-based layers.

42. The thin-film light emitting-diode according to claim 41, wherein the contact layer comprises platinum.

43. The thin-film light emitting-diode according to claim 36, further comprising a bonding solder arranged between the reflector and the GaN-based layers.

44. The thin-film light emitting-diode according to claim 36, wherein the GaN-based layers are structured into individual semiconductor layer stacks.

46. A method for an epitaxial fabrication of a thin-film light emitting-diode, the method comprising the steps of:

forming GaN-based layers on a substrate which comprises sapphire, the GaN-based layers comprising an active layer sequence for emitting radiation;

patterning the GaN-based layers into individual semiconductor layer stacks after they have been deposited on the substrate;

applying an electrically conductive carrier to the semiconductor layer stacks on a side of the semiconductor layer stacks which faces away from the substrate;

removing the substrate such that the substrate can be reused at least in part;

forming a contact surface on surfaces of the semiconductor layer stacks from which the substrate has been removed; and

separating the semiconductor layer stacks from each other into a plurality of thin-film light-emitting diodes.

47. The method of claim 46, wherein the substrate consists of sapphire.

48. The method of claim 46, wherein the substrate has a coefficient of thermal expansion deviating by no more than 50% from a coefficient of thermal expansion of the GaN-based layers.

49. The method of claim 46, wherein the substrate is removed by a laser ablation process.

50. The method of claim 49, wherein a laser radiation of said laser ablation process is radiated through at least a part of the substrate.

51. The method of claim 46, wherein the carrier comprises germanium.

52. The method of claim 46, wherein the carrier consists of germanium.