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TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

  • US 20100200897A1
  • Filed: 08/27/2008
  • Published: 08/12/2010
  • Est. Priority Date: 09/05/2007
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a transistor, the method comprising:

  • forming a gate on a substrate;

    forming a spacer on lateral side walls of the gate and on an adjacent portion of the substrate;

    rearranging material of the spacer such that the rearranged spacer covers only a lower portion of the lateral side walls of the gate and an increased portion of the substrate;

    providing source/drain regions in a portion of the substrate below the rearranged spacer.

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