IMAGE AND LIGHT SENSOR CHIP PACKAGES

• US 20100200898A1
• Filed: 02/09/2010
• Published: 08/12/2010
• Est. Priority Date: 02/11/2009
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou-Shiung, Lee, Jin-Yuan
• Granted Patent: US 8,193,555 B2
• Time in Patent Office: Days
• US Class Current: 257/294
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80

Abstract

An image or light sensor chip package includes an image or light sensor chip having a non-photosensitive area and a photosensitive area surrounded by the non-photosensitive area. In the photosensitive area, there are light sensors, a layer of optical or color filter array over the light sensors and microlenses over the layer of optical or color filter array. In the non-photosensitive area, there are an adhesive polymer layer and multiple metal structures having a portion in the adhesive polymer layer. A transparent substrate is formed on a top surface of the adhesive polymer layer and over the microlenses. The image or light sensor chip package also includes wirebonded wires or a flexible substrate bonded with the metal structures of the image or light sensor chip.

Claims

1. A light sensor chip comprising:

a semiconductor substrate;

multiple transistors each including a diffusion or doped area in said semiconductor substrate and a gate over a top surface of said semiconductor substrate;

a first dielectric layer over said top surface of said semiconductor substrate;

an interconnection layer over said first dielectric layer;

a second dielectric layer over said interconnection layer and over said first dielectric layer;

a metal trace over said second dielectric layer, wherein said metal trace has a width smaller than 1 micrometer;

an insulating layer on a first region of said metal trace, over said interconnection layer and over said first and second dielectric layers, wherein an opening in said insulating layer is over a second region of said metal trace, and said second region is at a bottom of said opening;

a polymer layer on said insulating layer;

a metal layer on said second region of said metal trace, wherein said metal layer includes a portion in said polymer layer, wherein said metal layer is connected to said second region of said metal trace through said opening, wherein said metal layer has a thickness between 3 and 100 micrometers and a width between 5 and 100 micrometers; and

a transparent substrate on a top surface of said polymer layer and over said multiple transistors, wherein an air space is between said insulating layer and said transparent substrate and over said multiple transistors, wherein a bottom surface of said transparent substrate provides a top wall of said air space, and said polymer layer provides a sidewall of said air space.

2. The light sensor chip of claim 1, further comprising a microelectromechanical system in said air space and over said multiple transistors.

3. The light sensor chip of claim 1, further comprising a layer of filter array and multiple microlenses in said air space and over said multiple transistors.

4. The light sensor chip of claim 1, wherein said multiple transistors compose a complementary-metal-oxide-semiconductor (CMOS) device or a charge coupled device (CCD).

5. The light sensor chip of claim 1, wherein said transparent substrate includes a glass substrate.

6. The light sensor chip of claim 1, wherein said metal layer includes a copper layer or a gold layer.

7. A light sensor chip comprising:

a semiconductor substrate;

multiple transistors each including a diffusion or doped area in said semiconductor substrate and a gate over a top surface of said semiconductor substrate;

a first dielectric layer over said top surface of said semiconductor substrate;

an interconnection layer over said first dielectric layer;

a second dielectric layer over said interconnection layer and over said first dielectric layer;

a metal trace over said second dielectric layer, wherein said metal trace has a width smaller than 1 micrometer;

an insulating layer on a first region of said metal trace, over said interconnection layer and over said first and second dielectric layers, wherein an opening in said insulating layer is over a second region of said metal trace, and said second region is at a bottom of said opening;

a metal layer on said second region of said metal trace, wherein said metal layer is connected to said second region of said metal trace through said opening, wherein said metal layer has a thickness between 3 and 100 micrometers and a width between 5 and 100 micrometers;

a polymer layer under a bottom surface of said semiconductor substrate; and

a transparent substrate on a bottom surface of said polymer layer, under said bottom surface of said semiconductor substrate and under multiple transistors, wherein an air space is between said semiconductor substrate and said transparent substrate and under said multiple transistors, wherein a top surface of said transparent substrate provides a bottom wall of said air space, and said polymer layer provides a sidewall of said air space.

8. The light sensor chip of claim 7, further comprising a microelectromechanical system in said air space and under said multiple transistors.

9. The light sensor chip of claim 7, further comprising a layer of filter array and multiple microlenses in said air space and under said multiple transistors.

10. The light sensor chip of claim 7, wherein said multiple transistors compose a complementary-metal-oxide-semiconductor (CMOS) device or a charge coupled device (CCD).

11. The light sensor chip of claim 7, wherein said semiconductor substrate has a thickness between 3 and 50 micrometers.

12. The light sensor chip of claim 7, wherein said metal layer includes a copper layer or a gold layer.

13. The light sensor chip of claim 7, further comprising an etching stop in said semiconductor substrate, wherein said etching stop has a first region substantially coplanar with said top surface of said semiconductor substrate and a second region substantially coplanar with said bottom surface of said semiconductor substrate.

14. A light sensor chip comprising:

a semiconductor substrate having a thickness between 3 and 50 micrometers, wherein a through via is in said semiconductor substrate, wherein said semiconductor substrate has a bottom surface at a horizontal level;

multiple transistors each including a diffusion or doped area in said semiconductor substrate and a gate over a top surface of said semiconductor substrate;

a dielectric layer over said top surface of said semiconductor substrate;

a metal trace over said dielectric layer, wherein said metal trace has a width smaller than 1 micrometer;

a passivation layer over said metal trace and over said dielectric layer;

a metal layer having a first portion in said through via, wherein a bottom surface of said metal layer is lower than said horizontal level;

a polymer layer under said bottom surface of said semiconductor substrate; and

a transparent substrate on a bottom surface of said polymer layer, under said bottom surface of said semiconductor substrate and under multiple transistors, wherein an air space is between said semiconductor substrate and said transparent substrate and under said multiple transistors, wherein a top surface of said transparent substrate provides a bottom wall of said air space, and said polymer layer provides a sidewall of said air space.

15. The light sensor chip of claim 14, further comprising a microelectromechanical system in said air space and under said multiple transistors.

16. The light sensor chip of claim 14, further comprising a layer of filter array and multiple microlenses in said air space and under said multiple transistors.

17. The light sensor chip of claim 14, wherein said multiple transistors compose a complementary-metal-oxide-semiconductor (CMOS) device or a charge coupled device (CCD).

18. The light sensor chip of claim 14, wherein said metal layer includes a copper layer or a gold layer.

19. The light sensor chip of claim 14, wherein said metal layer has a second portion in said polymer layer.

20. The light sensor chip of claim 14, wherein said transparent substrate includes a glass substrate.