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FIELD EFFECT DEVICE INCLUDNG RECESSED AND ALIGNED GERMANIUM CONTAINING CHANNEL

  • US 20100200934A1
  • Filed: 02/09/2010
  • Published: 08/12/2010
  • Est. Priority Date: 02/12/2009
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a semiconductor substrate;

    a gate aligned over a channel within the semiconductor substrate; and

    a plurality of source/drain regions separated by the channel, wherein;

    the channel is coplanar with the plurality of source/drain regions;

    the channel comprises a germanium containing material having a germanium content greater than a germanium content of the plurality of source/drain regions.

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