ION IMPLANTED SUBSTRATE HAVING CAPPING LAYER AND METHOD

• US 20100200954A1
• Filed: 02/06/2009
• Published: 08/12/2010
• Est. Priority Date: 02/06/2009
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: DEL AGUA BORNIQUEL, JOSE IGNACIO, Foad, Majeed, Poon, Tze, Schreutelkamp, Robert
• Granted Patent: US 7,858,503 B2
• Time in Patent Office: Days
• US Class Current: 257/607
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/823814 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures

Abstract

In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.

Claims

1. An ion implantation method comprising:

(a) implanting ions into a region of the substrate to form an ion implanted region;

(b) depositing a porous capping layer on the ion implanted region; and

(c) annealing the substrate and volatizing at least 80% of the porous capping layer overlying the ion implanted region during the annealing process.

2. A method according to claim 1 wherein (c) comprises annealing the ion implanted region on the substrate to volatilize at least 90% of the porous capping layer while retaining at least 60% of the implanted ions in the implanted region.

3. A method according to claim 1 wherein (b) comprises depositing a porous capping layer having a porosity of at least 20%.

4. A method according to claim 3 comprising depositing a porous capping layer having a porosity of at least 50%.

5. A method according to claim 1 wherein (b) comprises depositing a porous capping layer having continuous pores with a pore volume of at least 20%.

6. A method according to claim 1 wherein (b) comprises depositing the porous capping layer by introducing a process gas into the process zone and energizing the process gas to form a plasma at room temperature.

7. A method according to claim 1 wherein (b) comprises depositing a porous capping layer comprising silicon dioxide by introducing a process gas comprising a silicon-containing gas and an oxygen-containing gas into the process zone, energizing the process gas to form a plasma, and maintaining the substrate at less than 30°

C.

8. A method according to claim 7 wherein the silicon-containing gas comprises silane and the oxygen-containing gas comprises oxygen.

9. A method according to claim 7 comprising maintaining the process gas at a pressure of from about 5 mTorr to about 500 mTorr.

10. A method according to claim 7 comprising powering the antenna about the process zone at a power level of from about 1000 to about 10,000 Watts.

11. A method according to claim 1 wherein (a) comprises implanting ions comprising arsenic, boron or phosphorous, in a dosage from 1×

10¹⁴ atoms/cm³ to 1×

10¹⁷ atoms/cm³.

12. A method according to claim 11 comprising implanting the ions to a depth of less than 500 Å

from the substrate surface.

13. A method according to claim 11 comprising implanting arsenic ions by introducing a process gas comprising an arsenic-containing gas into the process zone, energizing the process gas to form a plasma, and maintaining the substrate at less than 30°

C.

14. A method according to claim 13 comprising maintaining the process gas at a pressure of from about 3 mTorr to about 5 Torr.

15. A method according to claim 13 comprising powering an antenna about the process zone at a voltage of from about 200 to about 8000 volts.

16. A method according to claim 1 wherein steps (a) and (b) are performed by placing the substrate in a process zone of a process chamber.

17. An intermediate product comprising:

(a) a substrate;

(b) a plurality of ion implantation regions on the substrate; and

(c) a porous capping layer covering the ion implantation regions.

18. A product according to claim 17 wherein the porous capping layer comprises a porosity of at least 20%.

19. A product according to claim 18 wherein the porous capping layer comprises a porosity of at least 50%.

20. A product according to claim 17 wherein the porous capping layer comprises continuous pores having a pore volume of at least 20%.

21. A product according to claim 17 wherein the ion implanted regions comprise ions of arsenic, boron or phosphorous.

22. A product according to claim 21 wherein the ions are implanted at a dosage from 1×

10¹⁴ atoms/cm³ to 1×

10¹⁷ atoms/cm³.

23. A product according to claim 21 wherein the ion implanted regions comprise ions implanted to a depth of less than 500Å

from the substrate surface.

24. A product according to claim 21 wherein the ion implanted regions comprise a p-type doped region adjacent to an n-type doped region.

25. A product according to claim 21 wherein the substrate comprises at least one of silicon oxide, silicon carbide, crystalline silicon, strained silicon, silicon germanium, doped or undoped polysilicon, doped or undoped silicon wafers, doped silicon, germanium, gallium arsenide, gallium nitride, glass, sapphire and quartz.