SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

• US 20100200969A1
• Filed: 01/13/2010
• Published: 08/12/2010
• Est. Priority Date: 02/09/2009
• Status: Active Grant

• Current Assignee: Advanced Semiconductor Engineering Inc (ASE Technology Holding Co., Ltd.)
• Original Assignee: Advanced Semiconductor Engineering Inc (ASE Technology Holding Co., Ltd.)
• Inventors: Hung, Chih Cheng, HUANG, Wen Pin, Tseng, Cheng Lan, Chen, Yu Chi, Hsu, Cheng Tsung
• Granted Patent: US 8,357,998 B2
• Time in Patent Office: Days
• US Class Current: 257/666
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45565 Single coating layer
• CPC Class Codes: H01L 2224/45664 Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48228 the bond pad being disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/4824 Connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48455 Details of wedge bonds
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48647 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48824 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48847 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/78302 : Shape
• CPC Class Codes: H01L 2224/78822 : Rotational mechanism
• CPC Class Codes: H01L 2224/85181 : connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
• CPC Class Codes: H01L 2224/85206 : Direction of oscillation
• CPC Class Codes: H01L 23/13 : characterised by the shape
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01203 : 3N purity grades, i.e. 99.9%
• CPC Class Codes: H01L 2924/01204 : 4N purity grades, i.e. 99.99%
• CPC Class Codes: H01L 2924/01205 : 5N purity grades, i.e. 99.999%
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

In a method of manufacturing a semiconductor package including a wire binding process, a first end of the bonding wire is bonded to a first pad so as to form a first bond portion. A second end of the bonding wire is bonded to a second pad, wherein an interface surface between the bonding wire and the second pad has a first connecting area. The bonded second end of the bonding wire is scrubbed so as to form a second bond portion, wherein a new interface surface between the bonding wire and the second pad has a second connecting area larger than the first connecting area. A remainder of the bonding wire is separated from the second bond portion.

Claims

1. A semiconductor package, comprising:

a chip having a first surface and a second surface opposite to the first surface, wherein the chip comprises a first pad located on the first surface;

a carrier having a third surface and a fourth surface opposite to the third surface, wherein the carrier comprises a second pads located on the third surface, and the chip is disposed on the carrier;

at least one bonding wire electrically connecting the chip to the carrier and comprising;

a first end bonded to the first pad so as to form a first bond portion; and

a second end bonded to the second pad so as to form a second bond portion, wherein the second bond portion comprises a fishtail region which comprises at least one scrubbing protrusion being integrally formed thereon; and

a molding compound sealing the chip and the bonding wire and covering the carrier.

2. The semiconductor package as claimed in claim 1, wherein the bonding wire comprises a copper bonding wire.

3. The semiconductor package as claimed in claim 1, wherein the bonding wire comprises a copper core and an anti-oxidative metallic layer covering the copper core.

4. The semiconductor package as claimed in claim 2, wherein

the anti-oxidative metallic layer is made of palladium;

and

the scrubbing protrusion comprises both copper and palladium.

5. The semiconductor package as claimed in claim 1, wherein the fishtail region further comprises at least two concave curves, one of which is above while the other one is below the scrubbing protrusion.

6. The semiconductor package as claimed in claim 1, wherein the cross-section of the scrubbing protrusion has the shape of a hill.

7. The semiconductor package as claimed in claim 1, wherein the carrier is a leadframe, and the second pad is a pad of a lead of the leadframe.

8. The semiconductor package as claimed in claim 1, wherein the carrier is a substrate, and the package is a BGA or WBGA package

9. A method of manufacturing a semiconductor package, said method comprising:

disposing a chip on a carrier, wherein the chip has a first surface and a second surface opposite to the first surface, the chip comprises a first pad located on the first surface, the carrier has a third surface and a fourth surface opposite to the third surface, and the carrier comprises a second pad located on the third surface;

providing a bonding wire comprising a first end and a second end;

bonding the first end of the bonding wire to the first pad so as to form a first bond portion;

bonding the second end of the bonding wire to the second pad, wherein an interface surface between the second end of the bonding wire and the second pad has a first connecting area;

after said bonding, scrubbing the bonded second end of the bonding wire so as to form a second bond portion, wherein a new interface surface between the second end of the bonding wire and the second pad has a second connecting area larger than the first connecting area;

separating a remainder of the bonding wire from the second bond portion; and

sealing the chip and the bonding wire and covering the carrier by a molding compound to obtain the package.

10. The method as claimed in claim 9, wherein said scrubbing results in a fishtail region in the second bond portion, and the fishtail region comprises at least one scrubbing protrusion being integrally formed thereon.

11. The method as claimed in claim 10, wherein the fishtail region further comprises at least two concave curves, one of which is above while the other one is below the scrubbing protrusion.

12. The method as claimed in claim 11, wherein

the lower curve corresponds in shape to a part of a wire bonding capillary that guides the bonding wire and presses the second end of the bonding wire against the second pad during said bonding;

and

the upper curve corresponds in shape to the same or another part of the capillary that scrubs the second end of the bonding wire during said scrubbing.

13. The method as claimed in claim 9, wherein

the second end of the bonding wire is bonded to the second pad by a wire bonding capillary that guides the bonding wire and presses the second end of the bonding wire against the second pad during said bonding;

and

said scrubbing comprises scrubbing the capillary against the bonded second end of the bonding wire to spread a material of the bonded second end onto the second pad, thereby increasing an area of the interface surface from the first connecting area to the second connecting area.

14. The method as claimed in claim 13, further comprising

after said bonding and prior to said scrubbing, raising the capillary, in a direction normal to the interface surface, upwardly from the second pad;

and

during said scrubbing, moving the capillary in a plane parallel to the interface surface to scrub the capillary against the bonded second end of the bonding wire.

15. The method as claimed in claim 13, wherein said scrubbing comprises:

rotating the capillary about an axis oriented in a direction normal to the interface surface.

16. The method as claimed in claim 13, wherein said scrubbing comprises:

moving the capillary in a scrubbing direction, which passes above the second bond portion, and is perpendicular to a straight line, wherein said straight line is projected on the third surface of the carrier and is defined by the first and second bond portions.

17. The method as claimed in claim 13, wherein said scrubbing comprises:

moving the capillary in a scrubbing direction, which pass above the second bond portion, and is parallel to a straight line, wherein said straight line is projected on the third surface of the carrier and is defined by the first and second bond portions.

18. The method as claimed in claim 9, wherein the bonding wire is a copper bonding wire

19. The method as claimed in claim 9, wherein the bonding wire comprises a copper core and an anti-oxidative metallic layer covering the copper core.

20. The method as claimed in claim 9, wherein the cross-section of the scrubbing protrusion has the shape of a hill.