Dopant Enhanced Interconnect
First Claim
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1. An interconnect device, comprising:
- a liner deposited over a trench and/or via structure formed in a dielectric material; and
an interconnect, formed on the liner, the interconnect comprising a dopant that does not alloy or react with the liner, wherein the dopant is present at a top surface of the interconnect.
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Abstract
Techniques are disclosed that enable an interconnect structure that is resistance to electromigration. A liner is deployed underneath a seed layer of the structure. The liner can be a thin continuous and conformal layer, and may also limit oxidation of an underlying barrier (or other underlying surface). A dopant that is compatible (non-alloying, non-reactive) with the liner is provided to alloy the seed layer, and allows for dopant segregation at the interface at the top of the seed layer. Thus, electromigration performance is improved.
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Citations
20 Claims
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1. An interconnect device, comprising:
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a liner deposited over a trench and/or via structure formed in a dielectric material; and an interconnect, formed on the liner, the interconnect comprising a dopant that does not alloy or react with the liner, wherein the dopant is present at a top surface of the interconnect. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An interconnect device, comprising:
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a barrier layer deposited on a trench and/or via structure formed in a dielectric material, the barrier layer being implemented with tantalum, tantalum nitride, titanium, titanium nitride, or combinations thereof; a liner deposited on the barrier layer, wherein the liner is implemented with ruthenium, cobalt, or nickel; and an interconnect, formed on the liner, the interconnect comprising a dopant that does not alloy or react with the liner, wherein the dopant is present at a top surface of the interconnect. - View Dependent Claims (8)
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9. A method for forming an interconnect device, the method comprising:
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depositing a liner over a trench and/or via structure provided in a dielectric material; forming, on the liner, an alloyed seed layer comprising a dopant that does not alloy or react with the liner; depositing a layer of interconnect fill metal on the alloyed seed layer; depositing a protective layer on a top surface of the interconnect fill metal; and diffusing the dopant away from the liner toward the top surface of the interconnect fill metal. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification