DETECTION DEVICE AND DETECTION SYSTEM USING THE SAME

• US 20100201383A1
• Filed: 12/13/2007
• Published: 08/12/2010
• Est. Priority Date: 09/26/2007
• Status: Active Grant

• Current Assignee: Hiroshima University
• Original Assignee: Hiroshima University
• Inventors: Morita, Mizuho, Hirokane, Takaaki
• Granted Patent: US 8,421,485 B2
• Time in Patent Office: Days
• US Class Current: 324/693
• CPC Class Codes: G01N 15/01 specially adapted for biological cells, e.g. blood cells investigating sedimentation of particle suspensions in blood G01N15/05
• CPC Class Codes: G01N 15/1023 Microstructural devices for non-optical measurement
• CPC Class Codes: G01N 15/1031 by measuring electrical or magnetic effects
• CPC Class Codes: G01N 2015/019 Biological contaminants; Fouling
• CPC Class Codes: G01N 27/07 Construction of measuring vessels; Electrodes therefor

Abstract

A particle detection device (10) included substrates (1, 4), insulating members (2, 3), supporting member (5), and electrodes (6, 7). The insulating member (2) is provided on a principal surface of the substrate (1) and has a recess. The insulating member (3) is provided so as to make contact with the insulating member (3) and the substrate (4). The substrate (4) is formed on a principal surface of the supporting member (5). The electrode (6) is formed on a surface, which is opposite to the surface where the insulating member (2) is formed, of the substrate (1). The electrode (7) is formed on the surface (5A), the side surface (5B), and the rear surface (5C) of the supporting member (5) so as to be connected to the substrate (4). Accordingly, the detection device 10 includes a gap (8) surrounded by the insulating members (2, 3). The substrate (1) is connected to the substrate (4) with the insulating members (2, 3) and the supporting member (5) (quartz). In one embodiment, the insulating member (3) consist of quantum dots. Detection of the particles is either optically or electrically.

Claims

1. A detection device comprising:

a first substrate (4, 47, 53, 54, 66, 85);

a second substrate (1, 35, 43, 62, 81) provided to face the first substrate (4, 47, 53, 54, 66, 85);

an insulating member (2, 25, 26, 33, 34, 39, 44, 45, 51, 63, 64, 82, 83) determining the distance between the first substrate (4, 47, 53, 54, 66, 85) and the second substrate (1, 35, 43, 62, 81);

a gap (8, 8A, 8B, 8C, 8D, 8E) provided between the first substrate (4, 47, 53, 54, 66, 85) and the second substrate (1, 35, 43, 62, 81); and

a current decreasing member (2, 3, 5;

3, 25, 26, 5;

2, 31, 5;

2, 5;

5, 32-34;

3, 39, 5;

42, 46, 44, 45;

51, 52, 5;

65, 72;

84, 91) for decreasing leakage current across the first substrate (4, 47, 53, 54, 66, 85) and the second substrate (1, 35, 43, 62, 81);

wherein

the second substrate (1, 35, 43, 62, 81) includes on a surface thereof an insulating film (2, 27, 39, 51), the surface being along the gap (8, 8A, 8B, 8C, 8D, 8E), if the current decreasing member (2, 3, 5;

3, 25, 26, 5;

2, 31, 5;

2, 5;

5, 32-34;

3, 39, 5;

42, 46, 44, 45;

51, 52, 5;

65, 72;

84, 91) is provided so as to make contact only with a principal surface of the first substrate (4, 47, 53, 54, 66, 85), the principal surface being opposite to the gap (8, 8A, 8B, 8C, 8D, 8E).

2. The detection device according to claim 1, wherein

the current decreasing member (2, 3, 5;

3, 25, 26, 5;

2, 31, 5;

2, 5;

5, 32-34;

3, 39, 5;

42, 46, 44, 45;

51, 52, 5;

65, 72;

84, 91) includes a nonconductive supporting member (5, 46) provided to face the second substrate (1, 35, 43, 62, 81) and contacting the insulating member (2, 25, 26, 33, 34, 39, 44, 45, 51, 63, 64, 82, 83);

the first substrate (4, 47, 53, 54, 66, 85) is provided on a principal surface of the supporting member (5, 46) apart from the insulating member (2, 25, 26, 33, 34, 39, 44, 45, 51, 63, 64, 82, 83), the principal surface being along the gap (8, 8A, 8B, 8C, 8D, 8E); and

each of the first and the second substrates (4, 47, 53, 54, 66, 85;

1, 35, 43, 62, 81) includes any one of metal, metal alloy, a metal-semiconductor compound, semimetal, a semiconductor, a transparent conductor, and conductive organic matter.

3. The detection device according to claim 2, wherein

the second substrate (1, 35, 43, 62, 81) includes the semiconductor;

and

the insulating member (2, 25, 26, 33, 34, 39, 44, 45, 51, 63, 64, 82, 83) includes a nonconductive material including a material for the second substrate (1, 35, 43, 62, 81).

4. The detection device according to claim 3, wherein

the second substrate (1, 35, 43, 62, 81) includes a silicon material;

and

the insulating member (2, 25, 26, 33, 34, 39, 44, 45, 51, 63, 64, 82, 83) includes any one of thermal oxide of the second substrate (1, 35, 43, 62, 81), thermal nitride of the second substrate (1, 35, 43, 62, 81), thermal carbide of the second substrate (1, 35, 43, 62, 81), and a compound thereof.

5. The detection device according to claim 3, wherein

the second substrate (1, 35, 43, 62, 81) includes a silicon material;

and

the insulating member (2, 25, 26, 33, 34, 39, 44, 45, 51, 63, 64, 82, 83) includes a first insulating member including any one of thermal oxide of the second substrate, thermal nitride of the second substrate, thermal carbide of the second substrate (1, 35, 43, 62, 81), and a compound thereof, and a second insulating member including an insulating material different from the first insulating member.

6. The detection device according to claim 5, wherein

the supporting member (5, 46) includes quartz;

the first insulating member includes the thermal oxide; and

the second insulating member includes a silicon dioxide film different from the thermal oxide.

7. The detection device according to claim 2, wherein

the first substrate (4, 47, 53, 54, 66, 85) includes the metal;

and

the second substrate (1, 35, 43, 62, 81) includes the semiconductor.

8. The detection device according to claim 2, wherein

the first substrate (4, 47, 53, 54, 66, 85) includes a p-type semiconductor;

and

the second substrate (1, 35, 43, 62, 81) includes an n-type semiconductor.

9. The detection device according to claim 1, wherein

the current decreasing member (2, 3, 5;

3, 25, 26, 5;

2, 31, 5;

2, 5;

5, 32-34;

3, 39, 5;

42, 46, 44, 45;

51, 52, 5;

65, 72;

84, 91) includes quantum dots (65, 72), the quantum dots (65, 72) being provided on a surface of at least one of the first and the second substrates (4, 47, 53, 54, 66, 85;

1, 35, 43, 62, 81), the surface being along the gap (8, 8A, 8B, 8C, 8D, 8E); and

each of the first and the second substrates (4, 47, 53, 54, 66, 85;

1, 35, 43, 62, 81) includes any one of metal, metal alloy, a metal-semiconductor compound, semimetal, a semiconductor, a transparent conductor, and conductive organic matter.

10. The detection device according to Claim 9 wherein the quantum dots (65, 72) include any one of a semiconductor, silicide, or metal.

11. The detection device according to claim 9, wherein

the first substrate (4, 47, 53, 54, 66, 85) includes a p-type semiconductor;

and

the second substrate (1, 35, 43, 62, 81) includes an n-type semiconductor.

12. The detection device according to claim 1, wherein

the current decreasing member (2, 3, 5;

3, 25, 26, 5;

2, 31, 5;

2, 5;

5, 32-34;

3, 39, 5;

42, 46, 44, 45;

51, 52, 5;

65, 72;

84, 91) includes a plurality of insulating films (84, 91) provided on a surface of at least one of the first and the second substrates (4, 47, 53, 54, 66, 85;

1, 35, 43, 62, 81) at given intervals, the surface being along the gap (8, 8A, 8B, 8C, 8D, 8E).

13. The detection device according to claim 12, wherein

the first substrate (4, 47, 53, 54, 66, 85) includes a p-type semiconductor;

and

the second substrate (1, 35, 43, 62, 81) includes an n-type semiconductor.

14. The detection device according to claim 1 further comprising a mount detector (130) to be marked with a sign showing mounting history of the detection device.

15. A detection system comprising:

the detection device (18) according to claim 14;

an installation unit (120) to be mounted with the detection device (18);

a light source (90) for irradiating the gap (8);

a photodetector (110) for detecting light from the gap (8); and

a detection/analysis unit (60A) for detecting or analyzing a target substance (9) based on the detection result by the photodetector (110);

wherein

the mount detector (130) of the detection device (18) is marked with the sign upon mounting of the detection device (18) to the installation unit (120).

16. A detection system comprising:

the detection device (18) according to claim 14;

an installation unit (120) to be mounted with the detection device (18);

a power source (40) for applying a voltage across the first and the second substrates (1, 4) of the detection device (18);

a measurement unit (50) for measuring an electric current flowing across the first and the second substrates (1, 4); and

a detection/analysis unit (60) for detecting or analyzing a target substance (9) based on the electric current measured by the measurement unit (50);

wherein

the mount detector (130) of the detection device (18) is marked with the sign upon mounting of the detection device (18) to the installation unit (120).

17. A detection system comprising:

the detection device (10, 10A, 11-17, 17A, 17B, 17C, 17D, 17E, 19, 19A, 19B) according to claim 1;

a light source (90) for irradiating the gap (8, 8A, 8B, 8C, 8D, 8E);

a photodetector (110) for detecting light from the gap (8, 8A, 8B, 8C, 8D, 8E); and

a detection/analysis unit (60A) for detecting or analyzing a target substance (9) based on the detection result by the photodetector (110).

18. The detection system according to claim 17, wherein the light source (90) irradiates the gap (8, 8A, 8B, 8C, 8D, 8E) with a plurality of lights each having a distinct wavelength.

19. The detection system according to claim 17, wherein the photodetector (110) detects fluorescence generated by the target substance (9) present in the gap (8, 8A, 8B, 8C, 8D, 8E).

20. A detection system comprising:

the detection device (10, 10A, 11-17, 17A, 17B, 17C, 17D, 17E, 19, 19A, 19B) according to claim 1;

a power source (40) for applying a voltage across the first and the second substrates (4, 47, 53, 54, 66, 85;

1, 35, 43, 62, 81) of the detection device (10, 10A, 11-17, 17A, 17B, 17C, 17D, 17E, 19, 19A, 19B);

a measurement unit (50) for measuring an electric current flowing across the first and the second substrates (4, 47, 53, 54, 66, 85;

1, 35, 43, 62, 81); and

a detection/analysis unit (60) for detecting or analyzing a target substance (9) based on the electric current measured by the measurement unit (50).