Liquid crystal display device and manufacturing method therefor

• US 20100201901A1
• Filed: 04/20/2010
• Published: 08/12/2010
• Est. Priority Date: 05/09/2007
• Status: Active Grant

• Current Assignee: Intellectual Ventures Assets 84 LLC (Intellectual Ventures LLC), MEC Management, LLC (Three Affiliated Tribes of the Fort Berthold Reservation, North Dakota)
• Original Assignee: Advanced Interconnect Materials, LLC, Tohoku University National Universities Corporation
• Inventors: Koike, Junichi, Kawakami, Hideaki
• Granted Patent: US 8,451,394 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/84 Ohmic electrodes, e.g. source or drain electrodes
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.

Claims

1. A liquid crystal display device comprising:

a thin film transistor (TFT) electrode terminal comprising a source electrode or a drain electrode, the source or drain electrode includes a layer substantially comprised of copper and an oxide covering the layer, wherein the oxide comprises manganese (Mn) and copper (Cu).

2. The liquid crystal display device according to claim 1, wherein the TFT electrode terminal includes a passivation layer, and said passivation layer is formed on said source electrode or said drain electrode.

3. The liquid crystal display device according to claim 2, wherein the passivation layer comprises a silicon nitride (SiNx) layer.

4. The liquid crystal display device according to claim 2, wherein the passivation layer comprises a silicon oxide (SiOx) layer or a silicon nitrided oxide (SiNyOx) layer.

5. The liquid crystal display device according to claim 2, wherein the passivation layer comprises an organic layer.

6. The liquid crystal display device according to claim 1, wherein the TFT electrode terminal further comprises a semiconductor layer having an ohmic contact with said source electrode or said drain electrode.

7. The liquid crystal display device according to claim 1, wherein the TFT electrode terminal further comprises a pixel electrode having an ohmic contact with said source electrode or said drain electrode.

8. The liquid crystal display device according to claim 7, wherein the pixel electrode is selected from a group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO).

9. The liquid crystal display device according to claim 1, wherein a composition formula of the oxide is Cu_XMn_YSi_ZO (0<

X<

Y, 0<

Z<

Y).

10. The liquid crystal display device according to claim 1, wherein the layer substantially comprised of copper is formed from a copper alloy, and an additive element of the copper alloy is manganese (Mn).

11. The liquid crystal display device according to claim 10, wherein an additive amount of said manganese (Mn) is in a range of 0.5 to 25 atom %.

12. The liquid crystal display device according to claim 1, wherein the oxide further comprises silicon (Si).

13. The liquid crystal display device according to claim 1, wherein the oxide comprises manganese (Mn) mainly and copper (Cu) subsidiarily.

14. A liquid crystal display device comprising:

a thin film transistor (TFT) electrode terminal comprising a source electrode or a drain electrode, the source or drain electrode includes a layer substantially comprised of copper and an oxide directly covering the layer, wherein the oxide comprises manganese (Mn) mainly and copper (Cu) subsidiarily.

15. The liquid crystal display device according to claim 14, wherein the TFT electrode terminal includes a passivation layer, and said passivation layer is formed on said source electrode or said drain electrode.

16. The liquid crystal display device according to claim 15, wherein the passivation layer comprises a silicon nitride (SiNx) layer.

17. The liquid crystal display device according to claim 15, wherein the passivation layer comprises a silicon oxide (SiOx) layer or a silicon nitrided oxide (SiNyOx) layer.

18. The liquid crystal display device according to claim 15, wherein the passivation layer comprises an organic layer.

19. The liquid crystal display device according to claim 14, wherein the TFT electrode terminal further comprises a semiconductor layer having an ohmic contact with said source electrode or said drain electrode.

20. The liquid crystal display device according to claim 14, wherein the TFT electrode terminal further comprises a pixel electrode having an ohmic contact with said source electrode or said drain electrode.

21. The liquid crystal display device according to claim 20, wherein the pixel electrode is selected from a group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO).

22. The liquid crystal display device according to claim 14, wherein the layer substantially comprised of copper (Cu) is formed from a copper alloy, and an additive element of the copper alloy is manganese (Mn).

23. The liquid crystal display device according to claim 22, wherein an additive amount of said manganese (Mn) is in a range of 0.5 to 25 atom %.

24. The liquid crystal display device according to claim 14, wherein the oxide further comprises silicon (Si).