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nvSRAM HAVING VARIABLE MAGNETIC RESISTORS

  • US 20100202191A1
  • Filed: 02/12/2009
  • Published: 08/12/2010
  • Est. Priority Date: 02/12/2009
  • Status: Active Grant
First Claim
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1. A non-volatile static random access memory (nvSRAM) comprising:

  • a six transistor static random access memory (6T SRAM) cell; and

    a non-volatile random access memory (nvRAM) cell comprising a first variable magnetic resistor, a second variable magnetic resistor, a first transistor, a second transistor and a third transistor, the 6T SRAM cell electrically connected to the nvRAM cell.

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