METHOD OF READING NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE FOR IMPLEMENTING THE METHOD
First Claim
1. A nonvolatile memory device, comprising:
- a read margin critical value calculation unit configured to calculate a critical value of a read margin between a read voltage and a threshold voltage of a specific cell;
an interference value calculation unit configured to calculate an interference value affecting the threshold voltage of the specific cell;
a comparison unit configured to compare the critical value and the interference value and to output a result of the comparison; and
a data selection unit configured to output either first data, read from the specific cell using a first read voltage, or second data, read from the specific cell using a second read voltage, based on the result outputted from the comparison unit.
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Abstract
A nonvolatile memory device includes a read margin critical value calculation unit configured to calculate a critical value of a read margin between a read voltage and a threshold voltage of a specific cell, an interference value calculation unit configured to calculate an interference value affecting the threshold voltage of the specific cell, a comparison unit configured to compare the critical value and the interference value and to output a result of the comparison, and a data selection unit configured to output either first data, read from the specific cell using a first read voltage, or second data, read from the specific cell using a second read voltage, based on the result outputted from the comparison unit.
105 Citations
12 Claims
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1. A nonvolatile memory device, comprising:
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a read margin critical value calculation unit configured to calculate a critical value of a read margin between a read voltage and a threshold voltage of a specific cell; an interference value calculation unit configured to calculate an interference value affecting the threshold voltage of the specific cell; a comparison unit configured to compare the critical value and the interference value and to output a result of the comparison; and a data selection unit configured to output either first data, read from the specific cell using a first read voltage, or second data, read from the specific cell using a second read voltage, based on the result outputted from the comparison unit. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A read method in a nonvolatile memory device, comprising:
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calculating an interference value affecting a threshold voltage of a specific cell; calculating a critical value of a read margin between a read voltage and the threshold voltage of the specific cell; reading data stored in the specific cell using a first read voltage; reading data stored in the specific cell using a second read voltage obtained by adjusting the first read voltage with the interference value; and comparing the interference value and the critical value, and outputting first data, if the interference value is less than the critical value, or outputting second data, if the interference value is greater than or equal to the critical value. - View Dependent Claims (9, 10, 11, 12)
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Specification