SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG HAVING AN ELLIPTICAL SECTIONAL SHAPE
First Claim
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1. A semiconductor device comprising:
- a first MOS transistor with a first conductivity formed on a semiconductor substrate;
a plurality of second MOS transistors with a second conductivity formed on the semiconductor substrate;
a plurality of first contact plugs with a circular planar shape; and
a second contact plug with an elliptical planar shape formed on a source or a drain in one of the second MOS transistors, the first contact plugs being formed on sources or drains in the remaining second MOS transistors and the first MOS transistor.
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Abstract
A semiconductor device includes a first MOS transistor, second MOS transistors, first contact plugs, and a second contact plug. The first MOS transistor with a first conductivity is formed on a semiconductor substrate. The second MOS transistors with a second conductivity are formed on the semiconductor substrate. The first contact plugs has a circular planar shape. The second contact plug has an elliptical planar shape and is formed on a source or a drain in one of the second MOS transistors. The first contact plugs are formed on sources or drains in the remaining second MOS transistors and the first MOS transistor.
32 Citations
19 Claims
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1. A semiconductor device comprising:
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a first MOS transistor with a first conductivity formed on a semiconductor substrate; a plurality of second MOS transistors with a second conductivity formed on the semiconductor substrate; a plurality of first contact plugs with a circular planar shape; and a second contact plug with an elliptical planar shape formed on a source or a drain in one of the second MOS transistors, the first contact plugs being formed on sources or drains in the remaining second MOS transistors and the first MOS transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first MOS transistor with a first conductivity formed on a semiconductor substrate; a second MOS transistor with a second conductivity formed on the semiconductor substrate; a third MOS transistor with the second conductivity formed on the semiconductor substrate; a plurality of first contact plugs with a circular planar shape formed on sources or drains of the first and third MOS transistors; and a second contact plug with an elliptical planar shape formed on a source or a drain of the second MOS transistor. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification