FLASH BACKED DRAM MODULE WITH A SELECTABLE NUMBER OF FLASH CHIPS

• US 20100202237A1
• Filed: 02/11/2009
• Published: 08/12/2010
• Est. Priority Date: 02/11/2009
• Status: Active Grant

• Current Assignee: JP Morgan Chase Bank, N.A. (JP Morgan Chase & Co)
• Original Assignee: STEC Incorporated (Western Digital Corporation)
• Inventors: Moshayedi, Mark, Finke, Douglas
• Granted Patent: US 7,983,107 B2
• Time in Patent Office: Days
• US Class Current: 365/228
• CPC Class Codes: G11C 5/04 Supports for storage elements , e.g. memory modules; Mounting or fixing of storage elements on such supports
• CPC Class Codes: G11C 5/141 Battery and back-up supplies

Abstract

A memory device for use with a primary power source and a backup power source, includes: volatile memory; an interface for connecting to a backup power source; a plurality of ports, each of which is for receiving a different corresponding non-volatile memory chip; a plurality of interfaces, each of which is for communicating through a different corresponding one of the plurality of ports with any non-volatile memory connected to that port; a controller that is programmed to activate a selectable set of the plurality of interfaces depending on which ports are to receive non-volatile memory chips, wherein said controller is also programmed to react to a loss of power from the primary power source by moving data from the volatile memory through the selected interfaces to whatever non-volatile memory is connected to the selectable set of interfaces.

Claims

1. A memory device for use with a primary power source and a backup power source, the memory device comprising:

volatile memory;

an interface for connecting to a backup power source arranged to temporarily power the volatile memory upon a loss of power from the primary power source;

a plurality of ports, each of which is for receiving a different corresponding non-volatile memory chip;

a plurality of interfaces, each of which is for communicating through a different corresponding one of the plurality of ports with any non-volatile memory connected to that port;

a controller that is programmed to activate a selectable set of the plurality of interfaces depending on which ports are to receive non-volatile memory chips, wherein said controller is also programmed to react to a loss of power from the primary power source by moving data from the volatile memory through the selected interfaces to whatever non-volatile memory is connected to the selectable set of interfaces.

2. The memory device of claim 1, wherein the volatile memory size is one Giga byte and the controller is programmed to activate four ports.

3. The memory device of claim 1, wherein the plurality of interfaces comprises four interfaces, wherein two of the four interfaces are connected to non-volatile memory chips, and wherein the controller is programmed to activate the two interfaces that are connected to non-volatile memory chips

4. The memory device of claim 1, wherein the non-volatile memory comprises electrically erasable programmable read-only memories (EEPROMs).

5. The memory device of claim 1, wherein the controller comprises at least one of an application-specific integrated circuit (ASIC) and a field programmable gate array (FPGA).

6. The memory device of claim 1, wherein power from the backup power source is primarily from a capacitor.

7. The memory device of claim 1, wherein power from the backup power source is primarily from a super capacitor.

8. The memory device of claim 1, wherein the controller is further programmed to move data from whatever non-volatile memory is connected to the selectable set of interfaces to the volatile memory upon a restoration of power of the primary power source.

9. The memory device of claim 1, wherein each of the plurality of ports comprise holes, pads, or lands of a printed circuit board.

10. The memory device of claim 1, wherein the controller further comprises a configuration memory for storing port-data identifying which of the plurality of ports is connected to a non-volatile memory device and the memory device further comprising a configuration data bus for reading and writing the port-data.

11. A method comprising:

detecting a power failure of a primary power source of a volatile memory; and

in response to detecting the power failure and while powering the volatile memory with a backup power source;

moving data stored in the volatile memory to a non-volatile memory comprised of a selectable number of non-volatile memory chips, wherein the moving is based on the selectable number of non-volatile memory chips.

12. The method of claim 11, wherein the volatile memory size is one Giga byte and the selectable number is four.

13. The method of claim 11, wherein the non-volatile memory comprises electrically erasable programmable read-only memories (EEPROMs).

14. The method of claim 11, further comprising moving data from the non-volatile memory to the volatile memory upon a restoration of power of the primary power source.

15. The method of claim 11, wherein power from the backup power source is primarily from a capacitor.

16. The method of claim 11, wherein power from the backup power source is primarily from a super capacitor.