METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
First Claim
1. A method for manufacturing a light emitting device, comprising:
- forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer;
forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate;
a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other;
removing the first substrate after the first bonding step; and
a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.
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Abstract
A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.
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Citations
20 Claims
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1. A method for manufacturing a light emitting device, comprising:
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forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step. - View Dependent Claims (2)
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3. A method for manufacturing a light emitting device, comprising:
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forming a first multilayer body including a first substrate made of one of GaAs, GaP, and SiC, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate and made of one of Si, Ge, and SiC, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for manufacturing a light emitting device, comprising:
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forming a first multilayer body including a first substrate made of sapphire, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate and made of one of Si, Ge, and SiC, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification