METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR
First Claim
1. A method for manufacturing a field-effect transistor including at least a source electrode, a drain electrode, an oxide semiconductor layer, a steam permeable insulating layer, and a gate electrode all formed on a substrate, the method comprising:
- after forming the steam permeable insulating layer on the oxide semiconductor layer, increasing electrical conductivity of the oxide semiconductor layer by annealing in an atmosphere containing moisture, wherein steam pressure during annealing is higher than saturated vapor pressure in the atmosphere at an annealing temperature.
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Abstract
A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.
113 Citations
15 Claims
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1. A method for manufacturing a field-effect transistor including at least a source electrode, a drain electrode, an oxide semiconductor layer, a steam permeable insulating layer, and a gate electrode all formed on a substrate, the method comprising:
after forming the steam permeable insulating layer on the oxide semiconductor layer, increasing electrical conductivity of the oxide semiconductor layer by annealing in an atmosphere containing moisture, wherein steam pressure during annealing is higher than saturated vapor pressure in the atmosphere at an annealing temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15-19. -19. (canceled)
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