MITIGATION OF HIGH STRESS AREAS IN VERTICALLY OFFSET STRUCTURES

• US 20100203718A1
• Filed: 02/06/2009
• Published: 08/12/2010
• Est. Priority Date: 02/06/2009
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Foster, Michael, Jafri, Ijaz H.
• Granted Patent: US 8,053,265 B2
• Time in Patent Office: Days
• US Class Current: 438/597
• CPC Class Codes: B81B 2203/0384 sloped profile
• CPC Class Codes: B81C 1/00103 Structures having a predefined profile, e.g. sloped or rounded grooves
• CPC Class Codes: B81C 2203/031 Anodic bondings

Abstract

Alternative methods of constructing a vertically offset structure are disclosed. An embodiment includes forming a flexible layer having first and second end portions, an intermediate portion coupling the first and second portions, and upper and lower surfaces. The distance between the upper and lower surfaces at the intermediate portion is less than the distance between the upper and lower surfaces at the first and second end portions. The first end portion is bonded to a base member. The second end portion of the flexible layer is deflected until the second end portion contacts the base member. The second end portion is bonded to the base member.

Claims

1. A method of constructing a vertically offset structure, comprising the steps of:

forming a flexible layer comprising,

first and second end portions,

an intermediate portion coupling the first and second end portions, and upper and lower surfaces,

wherein the distance between the upper and lower surfaces at the intermediate portion is less than the distance between the upper and lower surfaces at the first and second end portions;

bonding the first end portion to a base member;

deflecting the second end portion of the flexible layer until the second end portion contacts the base member; and

bonding the second end portion to the base member.

2. The method of claim 1, wherein bonding the first end portion to a base member includes anodically bonding the first end portion to the base member.

3. The method of claim 1, wherein deflecting includes deflecting with one of an electrically conductive and an electrically semi-conductive material.

4. The method of claim 1, wherein bonding the second end portion to the base member includes anodically bonding the second end portion to the base member.

5. The method of claim 1, wherein forming the flexible layer comprises etching the lower surface to form the intermediate portion.

6. The method of claim 3, wherein deflecting includes deflecting with highly doped silicon.

7. The method of claim 1 wherein the flexible layer comprises silicon.

8. A method of constructing a vertically offset structure, comprising the steps of:

forming a flexible layer having first and second end portions;

depositing a conductive layer on a base member;

electrically coupling the flexible layer to the conductive layer;

bonding the first end portion to the base member;

deflecting the second end portion of the flexible layer until the second end portion contacts the base member; and

bonding the second end portion to the base member.

9. The method of claim 8, wherein bonding the first end portion to a base member includes anodically bonding the first end portion to the base member.

10. The method of claim 8, wherein deflecting includes deflecting with one of an electrically conductive and an electrically semi-conductive material.

11. The method of claim 8, wherein bonding the second end portion to the base member includes anodically bonding the second end portion to the base member.

12. The method of claim 8, wherein the conductive layer comprises a metallic layer.

13. The method of claim 10, wherein deflecting includes deflecting with highly doped silicon.

14. The method of claim 8 wherein the flexible layer comprises silicon.

15. A method of constructing a vertically offset structure, comprising the steps of:

forming a flexible layer having first and second end portions;

bonding the first end portion to a base-member end portion;

deflecting the second end portion of the flexible layer until the second end portion contacts the base member, thereby forming a bent portion of the flexible layer;

bonding the second end portion to the base member; and

removing at the bent portion the first end portion and base-member end portion.

16. The method of claim 15, wherein bonding the first end portion to a base member includes anodically bonding the first end portion to the base member.

17. The method of claim 15, wherein deflecting includes deflecting with one of an electrically conductive and an electrically semi-conductive material.

18. The method of claim 15, wherein bonding the second end portion to the base member includes anodically bonding the second end portion to the base member.

19. The method of claim 17, wherein deflecting includes deflecting with highly doped silicon.

20. The method of claim 15 wherein the flexible layer comprises silicon.