Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells
First Claim
1. A process for selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown, comprising:
- providing a first substrate;
depositing a separation layer on said first substrate;
depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell;
mounting and bonding a surrogate substrate on top of the sequence of layers;
attaching a connecting link element to at least two opposed points on the periphery of the surrogate substrate; and
etching said separation layer while applying tension to said link element so as to remove said epitaxial layer from said first substrate.
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Accused Products
Abstract
A process for selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown, by providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a surrogate substrate on top of the sequence of layers; attaching a connecting link element to at least two opposed points on the periphery of the surrogate substrate; and etching said separation layer while applying tension to said link element so as to remove said epitaxial layer from said first substrate.
162 Citations
19 Claims
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1. A process for selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown, comprising:
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providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a surrogate substrate on top of the sequence of layers; attaching a connecting link element to at least two opposed points on the periphery of the surrogate substrate; and etching said separation layer while applying tension to said link element so as to remove said epitaxial layer from said first substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A process for selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown, comprising:
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providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a surrogate substrate on top of the sequence of layers; and etching said separation layer while applying an agitating action to the etchant solution so as to remove said epitaxial layer from said first substrate. - View Dependent Claims (19)
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Specification