Storage System Using Flash Memory Modules Logically Grouped for Wear-Leveling and Raid

• US 20100205359A1
• Filed: 04/22/2010
• Published: 08/12/2010
• Est. Priority Date: 03/29/2006
• Status: Active Grant

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Shimada, Kentaro, Tanaka, Katsuya
• Granted Patent: US 7,970,986 B2
• Time in Patent Office: Days
• US Class Current: 711/103
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 2212/1036 Life time enhancement
• CPC Class Codes: G06F 2212/7208 Multiple device management, e.g. distributing data over multiple flash devices
• CPC Class Codes: G06F 2212/7211 Wear leveling
• CPC Class Codes: G06F 3/0601 Interfaces specially adapted for storage systems
• CPC Class Codes: G06F 3/0664 at device level, e.g. emulation of a storage device or system

Abstract

A storage system using flash memories includes a storage controller and plural flash memory modules as storage media. Each flash memory module includes at least one flash memory chip and a memory controller for leveling erase counts of blocks belonging to the flash memory chip. The storage controller combines the plural flash memory modules into a first logical group, translates a first address used for accessing the flash memory modules belonging to the first logical group to a second address used for handling the first address in the storage controller, and combines the plural first logical groups into a second logical group.

Claims

1. A storage system using flash memories comprising a controller and plural flash memory modules as storage media,

wherein each flash memory module comprises at least one flash memory chip,

wherein the controller:

combines a group of the flash memory modules into a first logical group,

translates a first address used for accessing the flash memory modules belonging to the first logical group to a second address used for handling the first address in the controller,

executes a first process of leveling erase counts of blocks belonging to the flash memory chip, and

executes a second process of leveling among the flash memory modules belonging to the first logical group, and

wherein the second process levels erase counts of the flash memory modules.

2. The storage system using flash memories according to claim 1,

wherein the controller combines a plurality of first logical groups into a second logical group, and

wherein the second logical group includes redundant information to be used for rebuilding recorded data when a failure occurs on any of the flash memory modules.

3. The storage system using flash memories according to claim 1,

wherein the controller combines a plurality of first logical groups into a second logical group, and

wherein the second logical group is a logical group either on RAID level 1, RAID level 1, RAID level 1+0, RAID level 3, RAID level 5 or RAID level 6, and an equal capacity is provided for each of the first logical groups constituting the second logical group.

4. The storage system using flash memories according to claim 1, wherein:

a first value is a quotient yielded by dividing a product of effective write speed per flash memory module during the storage system operation and storage system endurance by flash memory endurance;

a second value is a quotient yielded by dividing a product of sustained write speed per flash memory module and storage system endurance by flash memory endurance; and

the capacity of the first logical group is set to be not less than the first value and not more than the second value.

5. The storage system using flash memories according to claim 1, wherein:

the controller combines a plurality of first logical groups into a second logical group;

the second logical group is a logical group either on RAID level 2 or RAID level 4; and

in the first logical groups constituting the second group, if the number of the first logical groups for storing redundant information is in, and the number of the first logical groups for storing data is “

n”

, a capacity of the first logical group for storing redundant information is set to be at least one time and not more than “

n/m”

times as much as that of the first logical group for storing data.

6. The storage system using flash memories according to claim 1,

wherein a memory area accessed via the first address is set to be larger than a memory area accessed via the second address.

7. The storage system using flash memories according to claim 1,

wherein the controller stores mapping information between the first address and the second address of each flash memory module, and an average erase count of blocks in each flash memory module.

8. The storage system using flash memories according to claim 1,

wherein the controller combines a plurality of first logical groups into a second logical group and constitutes a plurality of the second logical groups.

9. The storage system using flash memories according to claim 1,

wherein the controller combines a plurality of first logical groups into a second logical group and constitutes a plurality of second logical groups on different RAID levels.

10. The storage system using flash memories according to claim 1,

wherein the controller determines whether or not the storage media is flash memories when the storage system is activated or the storage media is connected with the storage system.

11. A wear-leveling method for a storage system comprising flash memory modules including at least one flash memory chip;

and a controller which combines a group of the flash memory modules into a first logical group, and translates a first address used for accessing the flash memory modules belonging to the first logical group to a second address used for handling the first address in the controller, the method comprising;

a step of allowing the controller to provide count management on write size of each predetermined memory area in the flash memory module;

a step of allowing the controller to calculate an average erase count yielded by dividing total write size of each flash memory module through a predetermined time period by a capacity of the flash memory module;

a first determination step of allowing the controller to determine whether or not a difference between a maximum value and a minimum value of the average erase count is not less than a predetermined value;

a step of allowing the controller to execute a first process of leveling erase counts of blocks belonging to the flash memory chip; and

a step of allowing the controller to execute a second process of leveling among the flash memory modules belonging to the first logical group;

wherein the second process levels erase counts of the flash memory modules,

wherein if the difference of the average erase count is not less than the predetermined value, the first determination step includes a step of allowing the controller to exchange data between a memory area having a maximum write size and a memory area having a minimum write size, among the flash memory modules having the maximum difference of the average erase count, and to change mapping information between the first address and the second address.

12. The wear-leveling method for a storage system using flash memories according to claim 11, further comprising:

a second determination step of allowing the controller to determine whether or not there are flash memory modules of which data has not been exchanged after performing the data exchange step,

wherein if it is determined that there are plural flash memory modules of which data has not been exchanged, the second determination step includes a step of allowing the controller to return to the first determination step.

13. The wear-leveling method for a storage system using flash memories according to claim 11,

wherein if total write size of each first logical group reaches a predetermined value, the controller performs the first determination step.

14. The wear-leveling method for storage system using flash memories according to claim 11,

wherein a memory area of the first address is set to be larger than that of the second address, and

the data exchange step includes a step of exchanging data by overwriting data in the memory area of the first address.

15. The wear-leveling method for a storage system using flash memories according to claim 13,

wherein a memory area of the first address is set to be larger than that of the second address, and

the data exchange step includes a step of exchanging data by overwriting data in the memory area of the first address.

16. The wear-leveling method for a storage system using flash memories according to claim 11,

wherein there is provided, for the flash memory module, free area in the same size as transferring data at which the memory controller can transfer at a time for each predetermined memory area in the flash memory module, for which count management on the write size is provided.

17. The wear-leveling method for a storage system using flash memories according to claim 11,

wherein there is provided, for the flash memory module, free area in the same size as the predetermined memory area in the flash memory module, for which count management on the write size is provided.

18. The wear-leveling method for a storage system using flash memories according to claim 11,

wherein if the flash memory module is replaced with a new flash memory module, the Write size of each predetermined memory area in the previous flash memory module, for which count management is provided. is set as write size of each predetermined memory area in the new replaced flash memory module.

19. A wear-leveling method for a storage system comprising flash memory modules including at least one flash memory chip;

and a controller which combines a group of the flash memory modules into a first logical group, and translates a first address used for accessing the flash memory modules belonging to the first logical group to a second address used for handling the first address in the controller, the method comprising;

a step of allowing the controller to provide count management on write size of each predetermined memory area in the flash memory module;

a step of allowing the controller to calculate an average erase count for each flash memory module, by adding a first average erase count at a predetermined time to a second average erase count yielded by dividing total write size since the predetermined time by capacity of the flash memory module;

a first determination step of allowing the controller to determine whether or not a difference between a maximum value and minimum value of the average erase count is not less than a predetermined value;

a step of allowing the controller to execute a first process of leveling erase counts of blocks belonging to the flash memory chip; and

a step of allowing the controller to execute a second process of leveling among the flash memory modules belonging to the first logical group;

wherein the second process levels erase counts of the flash memory modules,

wherein if it is determined that the difference is not less than the predetermined value, the first determination step includes a step of allowing the controller to exchange data between memory area having maximum write size and memory area having minimum write size, among the flash memory modules having the maximum difference of the erase count, and to change mapping information between the first address and the second address.

20. The wear-leveling method for a storage system using flash memories according to claim 19, further comprising a step of allowing the controller to replace the first average erase count with the second average erase count.