PZT Depositing Using Vapor Deposition

• US 20100206713A1
• Filed: 02/19/2009
• Published: 08/19/2010
• Est. Priority Date: 02/19/2009
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Birkmeyer, Jeffrey, Li, Youming
• Application Number:
  US12/389,078
• Publication Number:
  US 20100206713A1
• Time in Patent Office: Days
• US Class Current: 204/192.120
• CPC Class Codes: C23C 14/088 of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
• CPC Class Codes: C23C 14/3471 Introduction of auxiliary energy into the plasma
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3438 Electrodes other than cathode
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures

Abstract

Methods and apparatus for sputtering a target material, such as PZT, can include positioning a conductive grid between a target and a substrate. The target, the substrate, and a sputtering gas can be contained in a chamber, and power of a first RF source can be applied so as to maintain a plasma in the chamber. Power of a second RF source can be applied to the conductive grid. Target material can be sputtered from the target onto the substrate. Positioning of the conductive grid and application of power by the second RF source can affect properties of sputter deposition of the target material. For example, the second RF source and the conductive grid can be part of a capacitive circuit configured such that voltage change in the capacitive circuit affects properties of the sputtering gas and, in turn, properties of a sputter deposition process.

Claims

1. A method for sputtering, comprising:

positioning a conductive grid between a target and a substrate;

containing the target, the substrate, and a sputtering gas in a chamber;

applying power of a first RF source so as to maintain a plasma in the chamber;

applying power of a second RF source to the conductive grid; and

sputtering material from the target onto the substrate.

2. The method of claim 1, wherein the second RF source and the conductive grid are part of a capacitive circuit configured such that voltage change in the capacitive circuit affects properties of the sputtering gas.

3. The method of claim 1, wherein a distance between the conductive grid and the substrate is between about one fourth and about three fourths a distance between the target and the substrate.

4. The method of claim 1, wherein a distance between the conductive grid and the substrate is adjustable.

5. The method of claim 1, wherein the second RF source includes a DC bias.

6. The method of claim 1, wherein a power output of the second RF source is adjustable.

7. The method of claim 1, wherein the conductive grid includes lead.

8. The method of claim 1, wherein the conductive grid substantially covers a path between the target and the substrate.

9. The method of claim 1, wherein the conductive grid includes at least 90% open space.

10. The method of claim 1, further comprising:

applying power of a third RF source to the substrate.

11. The method of claim 1, wherein the sputtering gas includes oxygen.

12. The method of claim 1, wherein the target includes PZT.

13. A vapor deposition apparatus, comprising:

a chamber configured to contain a target, a substrate, and a sputtering gas;

a first RF source configured to apply power within the chamber;

a conductive grid positionable between the target and the substrate; and

a second RF source electrically connected to the conductive grid.

14. The apparatus of claim 13, wherein the second RF source and the conductive grid are part of a capacitive circuit configured such that voltage change in the capacitive circuit affects properties of the sputtering gas.

15. The apparatus of claim 13, wherein a distance between the conductive grid and the substrate is between about one fourth and about three fourths a distance between the target and the substrate.

16. The apparatus of claim 13, wherein a distance between the conductive grid and the substrate is adjustable.

17. The apparatus of claim 13, wherein the second RF source includes a DC bias.

18. The apparatus of claim 13, wherein the conductive grid includes lead.

19. The apparatus of claim 13, wherein the conductive grid substantially covers a path between the target and the substrate.

20. The apparatus of claim 13, wherein the conductive grid includes at least 90% open space.

21. The apparatus of claim 13, further comprising:

a third RF source configured to electrically connect to the substrate.

22. The apparatus of claim 13, wherein the sputtering gas includes oxygen.

23. The apparatus of claim 13, wherein the target includes PZT.