TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND MANUFACTURING METHOD OF THE TRANSISTOR AND THE SEMICONDUCTOR DEVICE
First Claim
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1. A transistor comprising:
- a gate electrode;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode;
a silicon layer over and in contact with the oxide semiconductor layer;
a first impurity semiconductor layer over the silicon layer;
a second impurity semiconductor layer over the silicon layer;
a source electrode layer electrically connected to the first impurity semiconductor layer; and
a drain electrode layer electrically connected to the second impurity semiconductor layer.
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Abstract
An object is to suppress deterioration in electric characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer, an impurity semiconductor layer is provided over the silicon layer, and a source electrode layer and a drain electrode layer are provided to be electrically connected to the impurity semiconductor layer.
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Citations
15 Claims
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1. A transistor comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode; a silicon layer over and in contact with the oxide semiconductor layer; a first impurity semiconductor layer over the silicon layer; a second impurity semiconductor layer over the silicon layer; a source electrode layer electrically connected to the first impurity semiconductor layer; and a drain electrode layer electrically connected to the second impurity semiconductor layer. - View Dependent Claims (2, 3, 4, 5)
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6. A transistor comprising;
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode; a silicon layer over and in contact with the oxide semiconductor layer, the silicon layer including an intrinsic region, a first impurity region, and a second impurity region, wherein the first impurity region and the second impurity region are provided apart from each other with the intrinsic region interposed between the first impurity region and the second impurity region; a source electrode layer electrically connected to the first impurity region; and a drain electrode layer electrically connected to the second impurity region. - View Dependent Claims (7, 8, 9)
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10. A manufacturing method of a transistor, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer over the gate insulating layer; forming a silicon layer over the oxide semiconductor layer; forming an impurity semiconductor layer over the silicon layer; etching the oxide semiconductor layer, the silicon layer, and the impurity semiconductor layer to form an island-shaped oxide semiconductor layer, an island-shaped silicon layer, and an island-shaped impurity semiconductor layer in a region that overlaps with the gate electrode; forming a conductive film so as to cover the island-shaped impurity semiconductor layer; and etching the conductive film and the island-shaped impurity semiconductor layer to form a first impurity semiconductor layer, a second impurity semiconductor layer, a source electrode layer electrically connected to the first impurity semiconductor layer, and a drain electrode layer electrically connected to the second impurity semiconductor layer. - View Dependent Claims (11, 12)
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13. A manufacturing method of a transistor, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer over the gate insulating layer; forming a silicon layer over the oxide semiconductor layer; forming a resist mask over the silicon layer; adding an impurity element to the silicon layer using the resist mask to form a first impurity region and a second impurity region in the silicon layer; forming a conductive film over the silicon layer; and etching the conductive film to form a source electrode layer electrically connected to the first impurity region and a drain electrode layer electrically connected to the second impurity region. - View Dependent Claims (14, 15)
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Specification