SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a gate electrode;
a gate insulating layer provided over the gate electrode;
an oxide semiconductor layer provided over the gate insulating layer and overlapped with the gate electrode;
a silicon layer provided over and in contact with a surface of the oxide semiconductor layer; and
a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer,wherein the silicon layer has a p-type conductivity.
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Accused Products
Abstract
The object is to suppress deterioration in electrical characteristics in a semiconductor device comprising a transistor including an oxide semiconductor layer. In a transistor in which a channel layer is formed using an oxide semiconductor, a p-type silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the p-type silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the p-type silicon layer is not provided.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating layer provided over the gate electrode; an oxide semiconductor layer provided over the gate insulating layer and overlapped with the gate electrode; a silicon layer provided over and in contact with a surface of the oxide semiconductor layer; and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer, wherein the silicon layer has a p-type conductivity. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a gate electrode; a gate insulating layer provided over the gate electrode; an oxide semiconductor layer provided over the gate insulating layer and overlapped with the gate electrode; a silicon layer provided over and in contact with part of a surface of the oxide semiconductor layer; a first metal oxide layer and a second metal oxide layer provided over and in contact with part of the surface of the oxide semiconductor layer, wherein the part of the surface of the oxide semiconductor layer is at least a part of region where the silicon layer and the oxide semiconductor layer are not in contact with each other, a source electrode layer which is electrically connected to the first metal oxide layer; and a drain electrode layer which is electrically connected to the second metal oxide layer, wherein the silicon layer has a p-type conductivity. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor device comprising:
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a gate electrode; a gate insulating layer provided over the gate electrode; a source electrode layer and a drain electrode layer provided over the gate insulating layer; an oxide semiconductor layer provided over the gate insulating layer, the source electrode layer, and the drain electrode layer and overlapped with the gate electrode; and a silicon layer provided over and in contact with a surface of the oxide semiconductor layer, wherein the source electrode layer and the drain electrode layer are electrically connected to the oxide semiconductor layer, and wherein the silicon layer has a p-type conductivity. - View Dependent Claims (12, 13)
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14. A manufacturing method of a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer over the gate insulating layer to overlap with the gate electrode; forming a silicon layer to cover the oxide semiconductor layer; etching the silicon layer to expose part of the oxide semiconductor layer; forming a conductive film over the silicon layer and the oxide semiconductor layer; and etching the conductive film to form a source electrode layer and a drain electrode layer, wherein the silicon layer has a p-type conductivity. - View Dependent Claims (15, 16)
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17. A manufacturing method of a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer over the gate insulating layer to overlap with the gate electrode; forming a silicon layer to cover the oxide semiconductor layer; etching the silicon layer to expose part of the oxide semiconductor layer; performing plasma treatment on the exposed part of the oxide semiconductor layer to form low-resistance regions, wherein resistance of the low-resistance regions lower than that of the oxide semiconductor layer; forming a conductive film over the silicon layer and the oxide semiconductor layer; and etching the conductive film to form a source electrode layer and a drain electrode layer, wherein the silicon layer has a p-type conductivity. - View Dependent Claims (18, 19)
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Specification