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SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

  • US 20100207119A1
  • Filed: 02/04/2010
  • Published: 08/19/2010
  • Est. Priority Date: 02/13/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating layer provided over the gate electrode;

    an oxide semiconductor layer provided over the gate insulating layer and overlapped with the gate electrode;

    a silicon layer provided over and in contact with a surface of the oxide semiconductor layer; and

    a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer,wherein the silicon layer has a p-type conductivity.

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