Semiconductor light emitting device and method of manufacturing the same
First Claim
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1. A semiconductor light emitting device comprising:
- a first conductive semiconductor layer;
an active layer on the first conductive semiconductor layer; and
a second conductive semiconductor layer on the active layer, in which a patterned roughness is formed on a top surface of the second conductive semiconductor layer.
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Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, in which a patterned roughness is formed on a top surface of the second conductive semiconductor layer.
36 Citations
15 Claims
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1. A semiconductor light emitting device comprising:
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a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, in which a patterned roughness is formed on a top surface of the second conductive semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a semiconductor light emitting device, the method comprising:
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depositing a first conductive semiconductor layer, an. active layer, and a second conductive semiconductor layer; forming a metal layer on the second conductive semiconductor layer; forming a metal dot layer by a heat treatment to the metal layer; and etching the metal dot layer to form a patterned roughness having a nano-size on a surface of the second conductive semiconductor layer. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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Specification