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SEMICONDUCTOR LIGHT EMITTING DEVICE

  • US 20100207159A1
  • Filed: 02/12/2010
  • Published: 08/19/2010
  • Est. Priority Date: 02/16/2009
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a light emitting structure including a plurality of compound semiconductor layers;

    a second electrode layer below the light emitting structure;

    a channel layer between the light emitting structure and an edge area of the second electrode layer;

    a buffer layer on the channel layer; and

    a passivation layer on the buffer layer.

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