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NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20100207195A1
  • Filed: 12/09/2008
  • Published: 08/19/2010
  • Est. Priority Date: 12/11/2007
  • Status: Active Grant
First Claim
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1. A non-volatile semiconductor storage device having a plurality of memory strings in each of which a plurality of electrically rewritable memory cells are connected in series, each of the memory strings comprising:

  • first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions;

    a charge storage layer formed to surround the side surfaces of the columnar portions; and

    first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer,the first conductive layers functioning as gate electrodes of the memory cells.

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