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NANOWIRE MESH DEVICE AND METHOD OF FABRICATING SAME

  • US 20100207208A1
  • Filed: 02/17/2009
  • Published: 08/19/2010
  • Est. Priority Date: 02/17/2009
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a plurality of vertically stacked and vertically spaced apart semiconductor nanowires located on a surface of a substrate, each semiconductor nanowire having two end segments in which one of the end segments is connected to a source region and the other end segment is connected to a drain region; and

    a gate region including a gate dielectric and a gate conductor over at least a portion of the plurality of vertically stacked and vertically spaced apart semiconductor nanowires, wherein each source region and each drain region is self-aligned with the gate region.

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