SEMICONDUCTOR POWER MODULE, INVERTER, AND METHOD OF MANUFACTURING A POWER MODULE

• US 20100208427A1
• Filed: 02/17/2010
• Published: 08/19/2010
• Est. Priority Date: 02/18/2009
• Status: Active Grant

• Current Assignee: Hitachi Power Semiconductor Device, Ltd. (Hitachi, Ltd.)
• Original Assignee: Hitachi, Ltd.
• Inventors: Nishihara, Atsuo, Horiuchi, Keisuke, Yokozuka, Takehide, Hozoji, Hiroshi, Hiyoshi, Michiaki
• Granted Patent: US 8,472,188 B2
• Time in Patent Office: Days
• US Class Current: 361/699
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 7/20927 Liquid coolant without phase change

Abstract

A semiconductor power module includes an insulated substrate mounting with a plurality of power semiconductor devices and a heat sink for radiating a heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the heat sink and the insulated substrate are bonded in metallic bonding with another surface opposite of one surface on which the radiation fins are formed with the base of the heat sink.

Claims

1. A semiconductor power module comprising:

an insulated substrate mounting with a plurality of power semiconductor devices; and

a heat sink integrally molded a plurality of radiation fins with one surface of a planate base by a forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, for radiating a heat generated from the plurality of power semiconductor devices, wherein

the heat sink and the insulated substrate are bonded in metallic bonding to another surface opposite of a surface of the base of the heat sink on which the radiation fins are formed.

2. The semiconductor power module according to claim 1 wherein a shot blasting work that blasts small balls harder than the metallic material is applied to the surface of the base on which the radiation fins are formed, prior to metallically bonding the insulated substrate mounting with the plurality of power semiconductor devices on the base of the heat sink.

3. The semiconductor power module according to claim 1 wherein the radiation fin formed on the base of heat sink includes a substantially circular pin fin in a shape of cross section,

the pin fin having a diameter at an end portion substantially equal to that at a base portion is molded on a peripheral portion of the base, and

the pin fin having a diameter at the end portion gradually made smaller than that at the base portion is molded on a central portion of the base.

4. A power inverter including a semiconductor power module wherein

the semiconductor power module comprises:

an insulated substrate mounting with a plurality of power semiconductor devices; and

a heat sink integrally molded a plurality of radiation fins with one surface of a planate base by a forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, for radiating a heat generated from the plurality of power semiconductor devices,

such that the heat sink and the insulated substrate are bonded in metallic bonding to another surface opposite of a surface of the base of the heat sink on which the radiation fins are formed, and

the power inverter includes a coolant water flow path provided on a housing wall of the power inverter, and the heat sink is mounted on the housing wall in such that the radiation fin is immersed in the coolant water flow path.

5. The power inverter according to claim 4 wherein a depth of the coolant water flow path is deep at correspondence to a central portion of the semiconductor power module mounted on the housing wall on which the coolant water flow path is formed, and shallow at correspondence to a peripheral portion of the semiconductor power module.

6. A method of manufacturing a semiconductor power module including an insulated substrate mounting with a plurality of power semiconductor devices and a heat sink for radiating a heat generated from the plurality of power semiconductor devices, comprising the steps of:

molding integrally the heat sink having a plurality of radiation fins with one surface of a planate base by a forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape; and

bonding the insulated substrate mounting with the plurality of power semiconductor devices by metallic bonding to another surface opposite of a surface of the base of the heat sink on which the radiation fins are formed.

7. The method according to claim 6 further comprising the step of, applying a shot blasting work that blasts small balls harder than the metallic material to the surface of the base on which the radiation fins are formed, prior to metallically bonding the insulated substrate mounting with the plurality of power semiconductor devices on the base of the heat sink.

8. The method according to claim 6 wherein a substantially cylindrical hole portion, into which a substantially circular shape pin fin is intruded, is formed on either the female or male die,

the hole having a diameter at an entrance portion substantially equal to that at a bottom portion is formed on a peripheral portion of either the female or male die, and

the hole having a diameter at the bottom portion gradually made smaller than that at the entrance portion is formed on a central portion of either the female or male die.