SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME

• US 20100208760A1
• Filed: 09/15/2009
• Published: 08/19/2010
• Est. Priority Date: 02/13/2009
• Status: Active Grant

• Current Assignee: Fujifilm Business Innovation Corp. (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Inventors: Yoshikawa, Masahiro
• Granted Patent: US 8,031,755 B2
• Time in Patent Office: Days
• US Class Current: 372/44.10
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/02253 using lenses
• CPC Class Codes: H01S 5/18313 by oxidizing at least one of the DBR layers
• CPC Class Codes: H01S 5/1833 with more than one structure
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18336 only below the active layer
• CPC Class Codes: H01S 5/18347 Mesa comprising active layer
• CPC Class Codes: H01S 5/18391 Aperiodic structuring to influence the near- or far-field distribution

Abstract

A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region. A first semiconductor layer next to the first selectively oxidized layer has an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, the first conductive region having a size smaller than that of the second conductive region.

Claims

1. A surface emitting semiconductor laser comprising:

a substrate;

a first semiconductor multilayer reflection mirror of a first conduction type that is formed on the substrate and includes pairs of semiconductor layers having different Al compositions;

an active region formed on the first semiconductor multilayer reflection mirror;

a second semiconductor multilayer reflection mirror of a second conduction type opposite to the first conduction type, the second semiconductor multilayer reflection mirror being formed on the active region and including pairs of semiconductor layers having different Al compositions;

a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region, the first selectively oxidized layer including AlAs; and

a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region, the second selectively oxidized layer including AlAs,

a first semiconductor layer next to the first selectively oxidized layer having an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, and

the first conductive region having a size smaller than that of the second conductive region.

2. The surface emitting semiconductor laser according to claim 1, wherein a post is formed on the substrate, and the first and second oxidized regions of the first and second selectively oxidized layers are defined by an identical oxidation process from a side surface of the post.

3. The surface emitting semiconductor laser according to claim 1, wherein a total thickness of the first selectively oxidized layer and the first semiconductor layer is equal to λ

/4n where λ

is an oscillation wavelength, and n is a refractive index of a medium, and a total thickness of the second selectively oxidized layer and the second semiconductor layer is equal to λ

/4n.

4. The surface emitting semiconductor laser according to claim 1, wherein the first selectively oxidized layer is closer to the active region than the second selectively oxidized layer.

5. The surface emitting semiconductor laser according to claim 1, wherein:

the first semiconductor multilayer reflection mirror is of n type;

the second semiconductor multilayer reflection mirror is of p type;

the first selectively oxidized layer is formed in the first semiconductor multilayer reflection mirror; and

the second selectively oxidized layer is formed in the second semiconductor multilayer reflection mirror.

6. A method for fabricating a surface emitting semiconductor laser comprising:

forming a first semiconductor multilayer reflection mirror of a first conduction type that is formed on a substrate and includes pairs of semiconductor layers having different Al compositions;

forming an active region formed on the first semiconductor multilayer reflection mirror;

forming a second semiconductor multilayer reflection mirror of a second conduction type opposite to the first conduction type, the second semiconductor multilayer reflection mirror being formed on the active region and including pairs of semiconductor layers having different Al compositions;

forming a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region, the first selectively oxidized layer including AlAs; and

forming a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region, the second selectively oxidized layer including AlAs,

a first semiconductor layer next to the first selectively oxidized layer having an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, and

the first conductive region having a size smaller than that of the second conductive region.

7. An optical semiconductor device comprising;

a surface emitting semiconductor laser; and

an optical system coupled with the surface emitting semiconductor laser,

the surface emitting semiconductor laser including;

a substrate;

a first semiconductor multilayer reflection mirror of a first conduction type that is formed on the substrate and includes pairs of semiconductor layers having different Al compositions;

an active region formed on the first semiconductor multilayer reflection mirror;

a second semiconductor multilayer reflection mirror of a second conduction type opposite to the first conduction type, the second semiconductor multilayer reflection mirror being formed on the active region and including pairs of semiconductor layers having different Al compositions;

a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region, the first selectively oxidized layer including AlAs; and

a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region, the second selectively oxidized layer including AlAs,

a first semiconductor layer next to the first selectively oxidized layer having an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, and

the first conductive region having a size smaller than that of the second conductive region.