Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition

• US 20100210069A1
• Filed: 02/12/2010
• Published: 08/19/2010
• Est. Priority Date: 02/13/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Jeong-il, Lee, Sang-Yoon, Ryu, Myung-Kwan, Park, Kyung-Bae, Seon, Jong-Baek
• Granted Patent: US 8,529,802 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.

Claims

1. A solution composition for an oxide thin film, comprising:

a zinc-containing first compound;

an indium-containing second compound; and

a third compound comprising at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y).

2. The solution composition for an oxide thin film of claim 1, wherein the metal or metalloid is comprised in the solution composition at about 50 at % or less based on the total number of zinc and indium atoms.

3. The solution composition for an oxide thin film of claim 1, wherein the atomic ratio of zinc and indium ranges from about 1:

10 to about 10;

1.

4. The solution composition for an oxide thin film of claim 3, wherein the atomic ratio of zinc and indium ranges from about 1:

5 to about 5;

1.

5. The solution composition for an oxide thin film of claim 3, wherein the atomic ratio of zinc and indium ranges from about 1:

10 to about 1;

1.

6. The solution composition for an oxide thin film of claim 3, wherein the atomic ratio of zinc and indium ranges from about 1:

5 to about 1;

1.

7. The solution composition for an oxide thin film of claim 1, wherein the first compound comprises at least one selected from the group consisting of zinc hydroxide, zinc alkoxide, zinc citrate, zinc acetate, zinc carbonate, zinc (meth)acrylate, zinc nitrate, zinc acetylacetonate, zinc halide, zinc thiocarbamate, zinc sulfonate, zinc undecylate, zinc borate, and hydrates thereof, and

the second compound comprises at least one selected from the group consisting of indium hydroxide, indium alkoxide, indium citrate, indium acetate, indium carbonate, indium (meth)acrylate, indium nitrate, indium acetylacetonate, indium halide, indium thiocarbamate, indium sulfonate, indium undecylate, indium borate, and hydrates thereof.

8. The solution composition for an oxide thin film of claim 7,

wherein the first compound comprises zinc acetate hydrate, and

The second compound comprises indium acetyl acetonate.

9. The solution composition for an oxide thin film of claim 1, further comprises at least one selected from the group consisting of an alcohol amine compound, an alkyl ammonium hydroxy compound, an alkyl amine compound, a ketone compound, an acid compound, a base compound, and deionized water.

10. A method of forming a thin film, comprising:

preparing a solution composition comprising a zinc-containing first compound, an indium-containing second compound, and a third compound comprising at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y);

applying the solution composition to a substrate; and

heat-treating the solution composition applied to the substrate to provide an oxide thin film.

11. The method of forming a thin film of claim 10,

wherein the first compound comprises at least one selected from the group consisting of zinc hydroxide, zinc alkoxide, zinc citrate, zinc acetate, zinc carbonate, zinc (meth)acrylate, zinc nitrate, zinc acetylacetonate, zinc halide, zinc thiocarbamate, zinc sulfonate, zinc undecylate, zinc borate, and hydrates thereof, and

the second compound comprises at least one selected from the group consisting of indium hydroxide, indium alkoxide, indium citrate, indium acetate, indium carbonate, indium (meth)acrylate, indium nitrate, indium acetylacetonate, indium halide, indium thiocarbamate, indium sulfonate, indium undecylate, indium borate, and hydrates thereof

12. A method of manufacturing a thin film transistor comprising

providing a first electrode, applying a solution composition including a zinc-containing first compound, an indium-containing second compound, and a third compound including at least one metal or metalloid selected from hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), or yttrium (Y), at a position overlapping the first electrode,

heat-treating the solution composition to provide an oxide semiconductor thin film,

providing a second electrode that is electrically connected with the oxide semiconductor thin film, and

annealing the oxide semiconductor thin film after providing the first electrode, the oxide semiconductor thin film, and the second electrode.

13. The method of manufacturing a thin film transistor of claim 12, wherein the metal or metalloid is included in an amount of 50 at % or less based on the total numbers of zinc and indium atoms of the solution composition.

14. The method of manufacturing a thin film transistor of claim 12, wherein the solution composition comprises zinc and the indium at an atomic ratio ranging from about 1:

10 to about 10;

1.

15. The method of manufacturing a thin film transistor of claim 14, wherein the solution composition comprises zinc and the indium at an atomic ratio ranging from about 1:

5 to about 5;

1.

16. The method of manufacturing a thin film transistor of claim 14, wherein the solution composition comprises zinc and the indium at an atomic ratio ranging from about 1:

10 to about 1;

1.

17. The method of manufacturing a thin film transistor of claim 14, wherein the solution composition comprises zinc and the indium at an atomic ratio ranging from about 1:

5 to about 1;

1.

18. The method of manufacturing a thin film transistor of claim 12, annealing of the oxide semiconductor thin film is performed at about 200 to about 400°

C.

19. The method of manufacturing a thin film transistor of claim 12, wherein the annealed oxide semiconductor thin film has resistivity of about 10⁻

3 Ω

cm to about 10¹⁰ Ω

cm.