METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR HAVING AN OXIDE SEMICONDUCTOR
First Claim
1. A method of manufacturing a field effect transistor having an oxide semiconductor, comprising:
- forming a mask pattern for a lower electrode from a light blocking film on the rear side of a substrate made of a translucent material;
carrying out photolithography through the exposure of the rear side of the substrate at least twice using the light blocking film as a mask; and
carrying out self-alignment between the lower electrode and an upper electrode both made of a transparent material.
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Accused Products
Abstract
A method of manufacturing a field effect transistor, which has high alignment accuracy between a gate electrode and source and drain electrodes and can provide a transparent device at a low cost. Since a patterned light blocking film is formed on the rear side of a substrate and used as a photomask for forming a gate electrode pattern and a source and drain electrode pattern on the front side of the substrate, the number of photomasks is reduced, and self-alignment between the gate electrode and the source and drain electrodes is carried out, thereby improving the alignment accuracy of these electrodes. Thereby, a method of manufacturing a high-accuracy low-cost field effect transistor can be provided.
10 Citations
19 Claims
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1. A method of manufacturing a field effect transistor having an oxide semiconductor, comprising:
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forming a mask pattern for a lower electrode from a light blocking film on the rear side of a substrate made of a translucent material; carrying out photolithography through the exposure of the rear side of the substrate at least twice using the light blocking film as a mask; and carrying out self-alignment between the lower electrode and an upper electrode both made of a transparent material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a transparent device, comprising:
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preparing a translucent substrate having a light blocking film with a predetermined pattern on the rear side; and forming a first translucent electrode pattern and a second translucent electrode pattern on the front side of the translucent substrate by using the light blocking film as a photomask. - View Dependent Claims (10, 11, 12, 13)
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14. A method of manufacturing a field effect transistor, comprising:
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preparing a translucent substrate having a light blocking film with a predetermined pattern on the rear side; and forming a translucent gate electrode pattern and a translucent source and drain electrode pattern on the front side of the translucent substrate by using the light blocking film as a photomask. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification