PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
First Claim
1. A method of producing a semiconductor device, comprising the steps of:
- providing a substrate on one side of which at least one semiconductor pillar stands;
forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar;
forming a conductive film on the first dielectric film;
removing by etching a portion of the conductive film located on a top surface and along an upper portion of a side surface of the semiconductor pillar;
forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar;
etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar;
forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography; and
partially removing by etching the conductive film using the resist pattern as a mask while protecting, by the protective film-based sidewall, the portions of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar, to form a gate electrode and a gate line extending from the gate electrode.
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Accused Products
Abstract
It is intended to provide a method of producing a semiconductor device, comprising the steps of: providing a substrate on one side of which at least one semiconductor pillar stands; forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar; forming a conductive film on the first dielectric film; removing by etching a portion of the conductive film located on a top surface and along an upper portion of a side surface of the semiconductor pillar; forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar; etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar; forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography; and partially removing by etching the conductive film using the resist pattern as a mask while protecting, by the protective film-based sidewall, the portions of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar, to form a gate electrode and a gate line extending from the gate electrode.
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Citations
19 Claims
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1. A method of producing a semiconductor device, comprising the steps of:
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providing a substrate on one side of which at least one semiconductor pillar stands; forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar; forming a conductive film on the first dielectric film; removing by etching a portion of the conductive film located on a top surface and along an upper portion of a side surface of the semiconductor pillar; forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar; etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar; forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography; and partially removing by etching the conductive film using the resist pattern as a mask while protecting, by the protective film-based sidewall, the portions of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar, to form a gate electrode and a gate line extending from the gate electrode. - View Dependent Claims (2, 10, 15)
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3. A method of producing a semiconductor device, comprising the steps of:
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providing a substrate on one side of which at least one semiconductor pillar stands, the semiconductor pillar having a stopper film formed on a top surface thereof; forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar; forming a conductive film on the first dielectric film; forming a second dielectric film on the conductive film to allow the semiconductor pillar to be buried therein; flattening a top surface of the resulting product by chemical mechanical polishing (CMP), using the stopper film as a CMP stopper; removing by etching a portion of the second dielectric film and the conductive film each located along an upper portion of a side surface of the semiconductor pillar to form the conductive film and the second dielectric film to have substantially the same height; forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar; etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar; removing the second dielectric film; forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography; and partially removing by etching the conductive film using the resist pattern as a mask while protecting, by the protective film-based sidewall, the portions of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar, to form a gate electrode and a gate line extending from the gate electrode. - View Dependent Claims (11, 16)
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4. A method of producing a semiconductor device, comprising the steps of:
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providing a substrate on one side of which at least one semiconductor pillar stands; forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar; forming a conductive film on the first dielectric film to allow the semiconductor pillar to be buried therein; etching an upper portion of the conductive film to remove a portion of the conductive film located on a top surface and along an upper portion of a side surface of the semiconductor pillar; forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar; etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar; forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography; and partially removing by etching, using the resist pattern as a mask, the conductive film to form at least a portion of the gate line, and partially removing by etching, using the protective film-based sidewall as a mask, the conductive film and the first dielectric film to form at least a portion of a gate electrode to have the desired film thickness. - View Dependent Claims (5, 7, 8, 12, 17)
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6. A method of producing a semiconductor device, comprising the steps of:
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providing a substrate on one side of which at least one semiconductor pillar stands, the semiconductor pillar having a stopper film formed on a top surface thereof; forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar; forming a conductive film on the first dielectric film to allow the semiconductor pillar to be buried therein; flattening a top surface of the resulting product by chemical mechanical polishing (CMP), using the stopper film as a CMP stopper; etching an upper portion of the conductive film to remove a portion of the conductive film located along an upper portion of a side surface of the semiconductor pillar; forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar; etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar; forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography; and partially removing by etching, using the resist pattern as a mask, the conductive film to form at least a portion of the gate line, and partially removing by etching, using the protective film-based sidewall as a mask, the conductive film and the first dielectric film to form at least a portion of a gate electrode to have the desired film thickness. - View Dependent Claims (9, 13, 14, 18, 19)
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Specification