POWER SUPPLY DEVICE FOR PLASMA PROCESSING

• US 20100211230A1
• Filed: 02/08/2010
• Published: 08/19/2010
• Est. Priority Date: 02/17/2009
• Status: Active Grant

• Current Assignee: AES Global Holdings Pte Ltd. (Advanced Energy Industries, Inc. (China))
• Original Assignee: Solvix GmbH (Advanced Energy Industries, Inc. (China))
• Inventors: CARDOU, Olivier, FRAGNIÈRE, Benoit, BULLIARD, Albert, OEHEN, Joël
• Granted Patent: US 8,542,471 B2
• Time in Patent Office: Days
• US Class Current: 700/293
• CPC Class Codes: H01J 37/32045 Circuits specially adapted for controlling the glow discharge
• CPC Class Codes: H01J 37/3444 Associated circuits
• CPC Class Codes: H02H 1/06 Arrangements for supplying operative power power supply arrangements in general G05F, H02M
• CPC Class Codes: H02H 3/38 responsive to both voltage and current; responsive to phase angle between voltage and current

Abstract

A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals.

According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit.

According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor.

According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

Claims

1. A power supply device for plasma processing, wherein electric arcs may occur, comprising

a power supply circuit for generating a voltage across output terminals,

said output terminals being for connection to a plasma processing chamber by means of conductors,

an interrupting switch connected between said power supply circuit and one of said output terminals for interrupting the power supply to said plasma processing chamber in case of the occurrence of an arc, and

a recovery energy circuit connected to said output terminals and to said power supply circuit, said recovery energy circuit serving for feeding at least partially the energy which is stored in said conductors when said interrupting switch is actuated to interrupt the power supply to said plasma processing chamber back to said power supply circuit,

wherein said power supply circuit is configured to reuse the energy fed back at least partially for the power supplied to said plasma processing chamber.

2. The power supply device according to claim 1, wherein said recovery energy circuit comprises a transformer or a DC-DC converter or both.

3. The power supply device according to claim 1, wherein said power supply circuit comprises a transformer having a primary side and a secondary side, the connection of said recovery energy circuit to said power supply circuit being arranged at said primary side of said transformer and the connection of said recovery energy circuit to said output terminals being arranged at said secondary side of said transformer.

4. The power supply device according to claim 1, wherein said power supply circuit comprises a capacitor connected to said recovery energy circuit for storing at least partially said energy fed back.

5. The power supply device according to claim 1, wherein said interrupting switch is an IGBT, a power MOSFET, or another kind of transistor.

6. The power supply device according to claim 1, further comprising an arc detection circuit for detecting arc events in said plasma processing chamber, said arc detection circuit being configured to determine at least one of the following criteria defining an arc event:

the current I through electrodes, between which the plasma is generated, exceeds a given value I1,

the absolute value of the voltage, |U|, across said electrodes drops by a given amount U0, while said current I is above a given minimum value I2,

|U| falls below a threshold U1 while said current I is above a given minimum value I3.

7. The power supply device according to claim 1, further comprising a floating potential neutralizing circuit connected to said output terminals for reducing the floating potential which is produced on at least one of a target and a substrate located in said plasma processing chamber after said interrupting switch is actuated to interrupt the power supply to said plasma processing chamber.

8. The power supply device according to claim 7, wherein said floating potential neutralizing circuit comprises a switch connected to said output terminals.

9. The power supply device according to claim 1, wherein said power supply circuit is designed to generate a continuous DC voltage or a pulsed DC voltage across said output terminals.

10. The power supply device according to claim 1, further comprising an inductance circuit which is arranged between said power supply circuit and one of said output terminals and which comprises an inductor and a second switch, wherein

said interrupting switch is arranged outside of said inductance circuit and wherein said second switch is connected parallel to said inductor.

11. The power supply device according to claim 1, further comprising a controller for causing said power supply circuit and said interrupting switch to be switched on and off, said controller being configured to determine a quenching time interval by means of a self-adaptive process, the quenching time interval defining the time interval during which, in an event of an arc, no voltage is generated across said output terminals.

12. A power supply device for plasma processing, wherein electric arcs may occur, comprising

a power supply circuit for generating a voltage across output terminals,

said output terminals being for connection to a plasma processing chamber by means of conductors,

a first switch connected between said power supply circuit and one of said output terminals for interrupting the power supply to said plasma processing chamber in case of the occurrence of an arc, and

an inductance circuit which is arranged between said power supply circuit and one of said output terminals and which comprises an inductor and a second switch, wherein

said first switch is arranged outside of said inductance circuit and wherein said second switch is connected parallel to said inductor.

13. The power supply device according to claim 12, wherein at least one of said first switch and said second switch is an IGBT, a power MOSFET or another kind of transistor.

14. The power supply device according to claim 12, wherein said second switch is a transistor being apt to be operated in the avalanche mode.

15. The power supply device according to claim 12, wherein said inductance circuit further comprises an overvoltage protection for protecting said second switch from overvoltage.

16. The power supply device according to claim 12, further comprising a second inductance circuit arranged between said power supply circuit and one of said output terminals, wherein said second inductance circuit comprises a second inductor and a third switch connected parallel to said second inductor.

17. The power supply device according to claim 12, further comprising an arc detection circuit for detecting arc events in said plasma processing chamber, said arc detection circuit being configured to determine at least one of the following criteria defining an arc event:

the current I through electrodes, between which the plasma is generated, exceeds a given value I1,

the absolute value of the voltage, |U|, across said electrodes drops by a given amount U0, while said current I is above a given minimum value I2,

|U| falls below a threshold U1 while said current I is above a given minimum value I3.

18. The power supply device according to claim 12, further comprising a floating potential neutralizing circuit connected to said output terminals for reducing the floating potential which is produced on at least one of a target and a substrate located in said plasma processing chamber after said first switch is actuated to interrupt the power supply to said plasma processing chamber.

19. The power supply device according to claim 12, wherein said floating potential neutralizing circuit comprises a third switch with a serial diode connected to said output terminals.

20. The power supply device according to claim 12, wherein said power supply circuit is designed to generate a continuous DC voltage or a pulsed DC voltage across said output terminals.

21. A power supply device for plasma processing, wherein electric arcs may occur, comprising

a power supply circuit for generating a voltage across output terminals,

said output terminals being for connection to a plasma processing chamber by means of conductors,

an interrupting switch connected between said power supply circuit and one of said output terminals for interrupting the power supply to said plasma processing chamber in case of the occurrence of an arc, and

a controller for causing said power supply circuit and said interrupting switch to be switched on and off, said controller being configured to determine a quenching time interval by means of a self-adaptive process, the quenching time interval defining the time interval during which, in an event of an arc, no voltage is generated across said output terminals.

22. The power supply device according to claim 21, wherein said controller is configured to cause said power supply circuit to be switched off in the event that the arc persists after actuating said interrupting switch a number of times.

23. The power supply device according to claim 21, wherein said controller is configured to determine one or more of the following delay parameters by means of said self-adaptive process:

a first delay parameter defining the number of times N said interrupting switch is, in an event of an arc, actuated before said power supply circuit is switched off;

a second delay parameter defining the time during which said power supply circuit remains switched off, after said number N defined by said first delay parameter has been reached;

a third delay parameter defining the time during which said interrupting switch remains, in an event of an arc, in the open state;

a fourth delay parameter defining the time interval between the detection of an arc event and the opening of said interrupting switch;

a fifth delay parameter defining the time interval between the step of closing said interrupting switch after the time interval defined by said fourth delay parameter has lapsed and the step of checking of whether the arc is still burning.

24. The power supply device according to claim 21, further comprising an inductance circuit which is arranged between said power supply circuit and one of said output terminals and which comprises an inductor and a parallel switch connected parallel to said inductor.

25. The power supply device according claim 24, wherein said controller is configured to control said interrupting switch and said parallel switch of said inductance circuit such that, in the event of an arc, said parallel switch is in the closed state when said interrupting switch is in the open state and is opened after said interrupting switch is closed again.

26. The power supply device to claim 21, further comprising an arc detection circuit for detecting arc events in said plasma processing chamber, said arc detection circuit being configured to determine at least one of the following criteria defining an arc event:

the current I through electrodes, between which the plasma is generated, exceeds a given value I1,

the absolute value of the voltage, |U|, across said electrodes drops by a given amount U0, while said current I is above a given minimum value I2,

|U| falls below a threshold U1 while said current I is above a given minimum value I3.

27. The power supply device according to claim 26, wherein said controller is configured to determine at least one of the parameters U0, U1, I1, I2, I3 by means of said self-adaptive process.

28. The power supply device according to claim 21, further comprising a floating potential neutralizing circuit connected to said output terminals for reducing the floating potential which is produced on at least one of a target and a substrate located in said plasma processing chamber after said interrupting switch is actuated to interrupt the power supply to said plasma processing chamber.

29. The power supply device according to claim 28, wherein said floating potential neutralizing circuit comprises another switch with a serial diode connected to said output terminals.

30. The power supply device according to claim 21, wherein said power supply circuit is designed to generate a continuous DC voltage or a pulsed DC voltage across said output terminals.