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THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE

  • US 20100213460A1
  • Filed: 02/03/2010
  • Published: 08/26/2010
  • Est. Priority Date: 02/20/2009
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a gate electrode layer;

    a gate insulating layer provided over the gate electrode layer;

    an oxide semiconductor layer provided over the gate insulating layer;

    a pair of conductive layers provided over the oxide semiconductor layer;

    a metal oxide layer provided over the oxide semiconductor layer and between the pair of conductive layers, wherein the metal oxide layer contains a same metal element as the pair of conductive layers, and has a higher oxygen concentration than the pair of conductive layers;

    a source electrode layer provided over one of the pair of conductive layers; and

    a drain electrode layer provided over the other of the pair of conductive layers.

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