THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
First Claim
1. A transistor comprising:
- a gate electrode layer;
a gate insulating layer provided over the gate electrode layer;
an oxide semiconductor layer provided over the gate insulating layer;
a pair of conductive layers provided over the oxide semiconductor layer;
a metal oxide layer provided over the oxide semiconductor layer and between the pair of conductive layers, wherein the metal oxide layer contains a same metal element as the pair of conductive layers, and has a higher oxygen concentration than the pair of conductive layers;
a source electrode layer provided over one of the pair of conductive layers; and
a drain electrode layer provided over the other of the pair of conductive layers.
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Accused Products
Abstract
In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
153 Citations
26 Claims
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1. A transistor comprising:
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a gate electrode layer; a gate insulating layer provided over the gate electrode layer; an oxide semiconductor layer provided over the gate insulating layer; a pair of conductive layers provided over the oxide semiconductor layer; a metal oxide layer provided over the oxide semiconductor layer and between the pair of conductive layers, wherein the metal oxide layer contains a same metal element as the pair of conductive layers, and has a higher oxygen concentration than the pair of conductive layers; a source electrode layer provided over one of the pair of conductive layers; and a drain electrode layer provided over the other of the pair of conductive layers. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a transistor, comprising:
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forming a first conductive film over a substrate; forming a first resist over the first conductive film; selectively etching the first conductive film using the first resist as a mask to form a gate electrode layer; forming a gate insulating layer over the substrate and the gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; forming a second conductive film over the oxide semiconductor film; forming a second resist over the second conductive film; selectively etching the oxide semiconductor film and the second conductive film using the second resist as a mask to form an oxide semiconductor layer and a conductive layer; forming a third conductive film over the gate insulating layer and the conductive layer; forming a third resist over the third conductive film; selectively etching the third conductive film using the third resist as a mask to form a source electrode layer and a drain electrode layer; and performing an oxidation treatment using the third resist as a mask to form a pair of conductive layers between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer, and to form a metal oxide layer over the oxide semiconductor layer. - View Dependent Claims (8, 9, 10, 11)
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12. A method for manufacturing a transistor, comprising:
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forming a first conductive film over a substrate; forming a first resist over the first conductive film; selectively etching the first conductive film using the first resist as a mask to form a gate electrode layer; forming a gate insulating layer over the substrate and the gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; forming a second conductive film over the oxide semiconductor film; forming a second resist over the second conductive film; selectively etching the oxide semiconductor film and the second conductive film using the second resist as a mask to form an oxide semiconductor layer and a conductive layer; forming a third conductive film over the gate insulating layer and the conductive layer; forming a third resist over the third conductive film; selectively etching the third conductive film using the third resist as a mask to form a source electrode layer and a drain electrode layer; performing an oxidation treatment using the third resist as a mask to form a pair of conductive layers between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer, and to form a metal oxide layer over the oxide semiconductor layer; and performing a thermal treatment to form a pair of oxide semiconductor layers whose oxygen concentration is lowered and a pair of conductive layers containing oxygen at high concentration, between the oxide semiconductor layer and each of the pair of conductive layers. - View Dependent Claims (13, 14, 15, 16)
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17. A method for manufacturing a transistor, comprising:
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forming a first conductive film over a substrate; forming a first resist over the first conductive film; selectively etching the first conductive film using the first resist as a mask to form a gate electrode layer; forming a gate insulating layer over the substrate and the gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; forming a second conductive film over the oxide semiconductor film; forming a second resist over the second conductive film; selectively etching the oxide semiconductor film and the second conductive film using the second resist as a mask to form an oxide semiconductor layer and a conductive layer; forming a third conductive film over the gate insulating layer and the conductive layer; forming a third resist over the third conductive film; selectively etching the third conductive film using the third resist as a mask to form a source electrode layer and a drain electrode layer; and performing a thermal oxidation treatment using the third resist as a mask to form a pair of conductive layers between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer, to form a metal oxide layer over the oxide semiconductor layer, and to form a pair of oxide semiconductor layers whose oxygen concentration is lowered, and a pair of conductive layers containing oxygen at high concentration between the oxide semiconductor layer and each of the pair of conductive layers. - View Dependent Claims (18, 19, 20, 21)
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22. A method for manufacturing a transistor, comprising:
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forming a first conductive film over a substrate; forming a first resist over the first conductive film; selectively etching the first conductive film using the first resist as a mask to form a gate electrode layer; forming a gate insulating layer over the substrate and the gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; forming a second conductive film over the oxide semiconductor film; forming a second resist over the second conductive film; selectively etching the oxide semiconductor film and the second conductive film using the second resist as a mask to form an oxide semiconductor layer and a conductive layer; forming a third conductive film over the gate insulating layer and the conductive layer; forming a third resist over the third conductive film; selectively etching the third conductive film using the third resist as a mask to form a source electrode layer and a drain electrode layer; and performing an oxidation treatment and a thermal oxidation treatment using the third resist as a mask to form a pair of conductive layers between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer, to form a metal oxide layer over the oxide semiconductor layer, and to form a pair of oxide semiconductor layers whose oxygen concentration is lowered, and a pair of conductive layers containing oxygen at high concentration between the oxide semiconductor layer and each of the pair of conductive layers. - View Dependent Claims (23, 24, 25, 26)
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Specification