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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20100213461A1
  • Filed: 02/05/2010
  • Published: 08/26/2010
  • Est. Priority Date: 02/25/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    a gate insulating film over the gate electrode layer;

    a first electrode layer and a second electrode layer whose end portions overlap with the gate electrode layer, over the gate insulating film;

    a first wiring layer over the first electrode layer;

    a second wiring layer over the second electrode layer; and

    an oxide semiconductor layer over the gate electrode layer,wherein the first electrode layer extends beyond an end portion of the first wiring layer;

    wherein the second electrode layer extends beyond an end portion of the second wiring layer;

    wherein the oxide semiconductor layer is electrically connected to a side face and a top face of the first electrode layer and a side face and a top face of the second electrode layer; and

    wherein the gate insulating film over the gate electrode layer has a region in contact with the oxide semiconductor layer between a region in contact with the first electrode layer and a region in contact with the second electrode layer.

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