SEMICONDUCTOR LIGHT-EMITTING DEVICE
First Claim
1. A semiconductor light-emitting device comprising:
- a plurality of compound semiconductor layers comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer;
an electrode layer under the compound semiconductor layers; and
a conductive support member under the electrode layer,wherein the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.
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Accused Products
Abstract
A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.
10 Citations
20 Claims
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1. A semiconductor light-emitting device comprising:
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a plurality of compound semiconductor layers comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; an electrode layer under the compound semiconductor layers; and a conductive support member under the electrode layer, wherein the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor light-emitting device comprising:
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a plurality of compound semiconductor layers comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; an electrode on the compound semiconductor layers; an electrode layer under the compound semiconductor layers; and a conductive support member under the electrode layer, wherein the conductive support member comprises an alloy material with a thermal expansion coefficient of about 1˜
9×
10−
6/K. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A semiconductor light-emitting device comprising:
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a plurality of compound semiconductor layers comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; an electrode on the compound semiconductor layers; an electrode layer under the compound semiconductor layers; and a conductive support member under the electrode layer, wherein the conductive support member comprises an alloy having a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer. - View Dependent Claims (20)
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Specification