TOP EMISSION INVERTED ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

• US 20100213482A1
• Filed: 12/16/2009
• Published: 08/26/2010
• Est. Priority Date: 02/24/2009
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Yoo, Juhn Suk, Kim, Yong Chul
• Granted Patent: US 8,803,172 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/321 Inverted OLED, i.e. having cathode between substrate and anode
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 50/826 Multilayers, e.g. opaque multilayers
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/80523 Multilayers, e.g. opaque multilayers

Abstract

A top emission inverted OLED device is disclosed. The a top emission inverted OLED device includes: first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate; at least one thin film transistor formed on the light generation area; a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions; a stacked pattern of first and second conductive patterns formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes; a cathode electrode formed on the light generation area and electrically connected to the second conductive pattern; an organic light emission layer disposed on the cathode electrode; an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and electrode patterns formed from the same material as the second conductive pattern on the rest of the contact holes which expose the first and second pad portions.

Claims

1. A top-emission inverted organic light emitting diode display device comprising:

first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate;

at least one thin film transistor formed on the light generation area;

a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions;

a stacked pattern of first and second conductive patterns formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes;

a cathode electrode formed on the light generation area and electrically connected to the second conductive pattern;

an organic light emission layer disposed on the cathode electrode;

an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and

electrode patterns formed from the same material as the second conductive pattern on the rest of the contact holes which expose the first and second pad portions.

2. The top-emission inverted organic light emitting diode display device claimed as claim 1, wherein the first conductive pattern is formed from molybdenum and the second conductive pattern is formed from indium-tin-oxide.

3. The top-emission inverted organic light emitting diode display device claimed as claim 1, wherein the cathode electrode is formed from an aluminum-neodymium alloy with superior reflectivity.

4. A top-emission inverted organic light emitting diode display device comprising:

first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate;

at least one thin film transistor formed on the light generation area;

a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions;

a conductive pattern formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes;

a first cathode electrode formed on the light generation area and electrically connected to the conductive pattern;

a second cathode electrode formed on the first cathode electrode;

an organic light emission layer disposed on the second cathode electrode;

an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and

electrode patterns formed from the same material as the conductive pattern on the rest of the contact holes which expose the first and second pad portions.

5. The top-emission inverted organic light emitting diode display device claimed as claim 4, wherein the first cathode electrode is formed from molybdenum and the second cathode electrode is formed from an aluminum-neodymium alloy.

6. The top-emission inverted organic light emitting diode display device claimed as claim 4, wherein the conductive pattern is formed from indium-tin-oxide.

7. A method of manufacturing a top-emission inverted organic light emitting diode display device, comprising:

preparing a metal substrate defined into a light generation area and first and second pad areas positioned adjacent thereto;

forming at least one thin film transistor on the light generation area;

forming a passivation layer which is configured to cover the thin film transistor on the metal substrate and include contact holes partially exposing the thin film transistor and the first and second pad areas;

forming first and second conductive patterns, which are configured to make contact with the exposed part of the thin film transistor through one of the contact holes, by sequentially depositing and patterning first and second conductive layers on the passivation layer;

forming a planarization layer, which is configured to partially expose the thin film transistor and the first and second pad areas, on the metal substrate with the first and second conductive patterns;

forming a cathode electrode, which is electrically connected to the second conductive pattern, on the metal substrate covered with the planarization layer;

forming a bank pattern, which is configured to partially expose the cathode electrode and the first and second pad areas, on the metal substrate with the cathode electrode;

forming an organic light emission layer on the exposed cathode electrode; and

forming an anode electrode of a transparent conductive material on the organic light emission layer,

wherein electrode patterns are formed, from the same material as the second conductive pattern, on the rest of the contact holes which expose the first and second pad areas.

8. The method claimed as claim 7, wherein the first conductive pattern is formed from molybdenum and the second conductive pattern is formed from indium-tin-oxide.

9. A method of manufacturing a top-emission inverted organic light emitting diode display device, comprising:

preparing a metal substrate defined into a light generation area and first and second pad areas positioned adjacent thereto;

forming at least one thin film transistor on the light generation area;

forming a passivation layer which is configured to cover the thin film transistor on the metal substrate and include contact holes partially exposing the thin film transistor and the first and second pad areas;

forming a conductive pattern, which is configured to make contact with the exposed part of the thin film transistor through one of the contact holes, by depositing and patterning a conductive layer on the passivation layer;

forming a planarization layer, which is configured to partially expose the thin film transistor and the first and second pad areas, on the metal substrate with the conductive pattern;

forming first and second cathode electrodes, which is electrically connected to the conductive pattern, by sequentially stacking and patterning first and second metal layers on the metal substrate covered with the planarization layer;

forming a bank pattern, which is configured to partially expose the second cathode electrode and the first and second pad areas, by providing and patterning a bank layer on the metal substrate with the first and second cathode electrodes;

forming an organic light emission layer on the exposed second cathode electrode; and

forming an anode electrode of a transparent metal material on the organic light emission layer,

wherein electrode patterns are formed, from the same material as the conductive pattern, on the rest of the contact holes which expose the first and second pad areas.

10. The method claimed as claim 9, wherein the first cathode electrode is formed from molybdenum and the second cathode electrode is formed from an aluminum-neodymium alloy.