GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

• US 20100213494A1
• Filed: 04/28/2010
• Published: 08/26/2010
• Est. Priority Date: 10/22/2004
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Postech Foundation, Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: LEE, Jong Lam
• Granted Patent: US 7,999,279 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.

Claims

1. A light emitting element, comprising:

a P-type semiconductor layer;

an active layer and an N-type semiconductor layer formed on the P-type semiconductor layer;

an N-type electrode formed on the N-type semiconductor layer;

an insulation film formed on at least a lateral side of the N-type semiconductor layer; and

a metallic protective layer for protecting the P-type semiconductor layer and N-type semiconductor layer.

2. The light emitting element as claimed in claim 1, wherein the metallic protective layer is formed on lateral sides of the P-type and N-type semiconductor layers and on a bottom side of the P-type semiconductor layer.

3. The light emitting element as claimed in claim 1, further comprising an insulation layer formed on a part of a bottom side of the P-type semiconductor layer.

4. The light emitting element as claimed in claim 3, wherein the insulation layer extends to a lateral side of the active layer.

5. The light emitting element as claimed in claim 1, further comprising an anti-reflective layer formed on the N-type semiconductor layer.

6. The light emitting element as claimed in claim 1, further comprising a P-type electrode formed beneath the P-type semiconductor layer.

7. The light emitting element as claimed in claim 6, wherein the P-type electrode includes a contact metallic layer, a reflective metallic layer, a diffusion barrier layer and a bonding metallic layer.