ELECTRODE STRUCTURES FOR LEDS WITH INCREASED ACTIVE AREA
First Claim
1. An electrode structure for an LED, the electrode structure comprising:
- a semiconductor material having a cutout formed therein;
an electrically insulating dielectric material;
a metal electrode; and
wherein a portion of the electrode is formed outside of the cutout and a portion of the electrode is formed inside of the cutout; and
wherein the portion of the electrode outside the cutout is electrically isolated from the semiconductor material by the dielectric material.wherein the portion of the electrode inside the cutout is in electrical contact with the semi conducting material.
6 Assignments
0 Petitions
Accused Products
Abstract
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material.
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Citations
11 Claims
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1. An electrode structure for an LED, the electrode structure comprising:
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a semiconductor material having a cutout formed therein; an electrically insulating dielectric material; a metal electrode; and wherein a portion of the electrode is formed outside of the cutout and a portion of the electrode is formed inside of the cutout; and wherein the portion of the electrode outside the cutout is electrically isolated from the semiconductor material by the dielectric material. wherein the portion of the electrode inside the cutout is in electrical contact with the semi conducting material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification